Datasheet

LM4809, LM4809LQBD
SNAS126F FEBRUARY 2001REVISED APRIL 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
Supply Voltage 6.0V
Storage Temperature 65°C to +150°C
ESD Susceptibility
(3)
3.5kV
ESD Machine model
(4)
250V
Junction Temperature (T
J
) 150°C
Vapor Phase (60 sec.) 215°C
Soldering Information SOIC Package Infrared (15 sec.) 220°C
θ
JA
(SOIC) 170°C/W
θ
JC
(SOIC) 35°C/W
θ
JA
(MSOP) 210°C/W
Thermal Resistance θ
JC
(MSOP) 56°C/W
θ
JA
(WSON) 117°C/W
(5)
θ
JA
(WSON) 150°C/W
(6)
θ
JC
(WSON) 15°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) Human body model, 100pF discharged through a 1.5k resistor.
(4) Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage, then
discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ohms).
(5) The given θ
JA
is for an LM4809 packaged in an NGL0008B wit the Exposed-Dap soldered to a printed circuit board copper pad with an
area equivalent to that of the Exposed-Dap itself.
(6) The given θ
JA
is for an LM4809 packaged in an NGL0008B with the Exposed-Dap not soldered to any printed circuit board copper.
Operating Ratings
Temperature Range T
MIN
T
A
T
MAX
40°C T
A
85°C
Supply Voltage (V
CC
) 2.0V V
CC
5.5V
Electrical Characteristics V
DD
= 5V
(1)(2)
The following specifications apply for V
DD
= 5V unless otherwise specified, limits apply to T
A
= 25°C.
LM4809
Units
Parameter Test Conditions
(Limits)
Typ
(3)
Limit
(4)
V
DD
Supply Voltage 2.0 V (min)
5.5 V (max)
I
DD
Supply Current V
IN
= 0V, I
O
= 0A 1.4 3 mA (max)
I
SD
Shutdown Current V
IN
= 0V, V
SHUTDOWN
= GND 0.4 2 µA(max)
V
OS
Output Offset Voltage V
IN
= 0V 4.0 50 mV(max)
P
O
Output Power THD+N = 0.1%, f = 1kHz
R
L
= 16 105 mW
R
L
= 32 70 65 mW (min)
THD+N Total Harmonic Distortion P
O
= 50mW, R
L
= 32 0.3 %
f = 20Hz to 20kHz
Crosstalk Channel Separation R
L
= 32; P
O
= 70mW 70 dB
PSRR Power Supply Rejection Ratio C
B
= 1.0µF; V
RIPPLE
= 200mV
PP
, 70 dB
f = 1kHz; Input terminated into 50
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) All voltages are measured with respect to the ground pin, unless otherwise specified.
(3) Typical specifications are specified at +25OC and represent the most likely parametric norm.
(4) Datasheet min/max specification limits are ensured by design, test, or statistical analysis.
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