Datasheet

LM4766
SNAS031F –SEPTEMBER 1998–REVISED MARCH 2013 www.ti.com
ELECTRICAL CHARACTERISTICS
(1) (2)
The following specifications apply for V
CC
= +30V, V
EE
= −30V, I
MUTE
= −0.5mA with R
L
= 8Ω unless otherwise specified.
Limits apply for T
A
= 25°C.
Symbol Parameter Conditions LM4766 Units
(Limits)
Typical
(3)
Limit
(4)
20 V (min)
|V
CC
| + |V
EE
| Power Supply Voltage
(5)
GND − V
EE
≥ 9V 18
60 V (max)
NDL Package, V
CC
= ±30V,THD+N = 0.1% 40 30 W/ch (min)
(max),
Output Power (Continuous
f = 1kHz, f = 20kHz
P
O
(6) (7)
Average)
NDB Package, V
CC
= ±26V
(7)
, 30 25 W/ch (min)
THD+N = 0.1% (max), f = 1kHz, f = 20kHz
NDL Package, 30W/ch, R
L
= 8Ω, 0.06 %
20Hz ≤ f ≤ 20kHz, A
V
= 26dB
Total Harmonic Distortion
THD+N
Plus Noise
NDB Package, 25W/ch, R
L
= 8Ω, 0.06 %
20Hz ≤ f ≤ 20kHz, A
V
= 26dB
X
talk
Channel Separation f = 1kHz, V
O
= 10.9Vrms 60 dB
SR
(6)
Slew Rate V
IN
= 1.2Vrms, t
rise
= 2ns 9 5 V/μs (min)
I
total
(8)
Total Quiescent Power Supply Both Amplifiers V
CM
= 0V, V
O
= 0V, I
O
= 0mA 48 100 mA (max)
Current
V
OS
(8)
Input Offset Voltage V
CM
= 0V, I
O
= 0mA 1 10 mV (max)
I
B
Input Bias Current V
CM
= 0V, I
O
= 0mA 0.2 1 μA (max)
I
OS
Input Offset Current V
CM
= 0V, I
O
= 0mA 0.01 0.2 μA (max)
I
O
Output Current Limit |V
CC
| = |V
EE
| = 10V, t
ON
= 10ms, V
O
= 0V 4 3 Apk (min)
|V
CC
–V
O
|, V
CC
= 20V, I
O
= +100mA 1.5 4 V (max)
V
OD
(8)
Output Dropout Voltage
(9)
|V
O
–V
EE
|, V
EE
= −20V, I
O
= −100mA 2.5 4 V (max)
V
CC
= 30V to 10V, V
EE
= −30V, V
CM
= 0V, I
O
125 85 dB (min)
= 0mA
PSRR
(8)
Power Supply Rejection Ratio
V
CC
= 30V, V
EE
= −30V to −10V V
CM
= 0V, I
O
110 85 dB (min)
= 0mA
CMRR
(8)
Common Mode Rejection Ratio V
CC
= 50V to 10V, V
EE
= −10V to −50V, V
CM
110 75 dB (min)
= 20V to −20V, I
O
= 0mA
A
VOL
(8)
Open Loop Voltage Gain R
L
= 2kΩ, ΔV
O
= 40V 115 80 dB (min)
GBWP Gain Bandwidth Product f
O
= 100kHz, V
IN
= 50mVrms 8 2 MHz (min)
e
IN
(6)
IHF–A Weighting Filter, R
IN
= 600Ω (Input
Input Noise 2.0 8 μV (max)
Referred)
P
O
= 1W, A–Weighted, Measured at 1kHz, 98 dB
R
S
= 25Ω
SNR Signal-to-Noise Ratio
P
O
= 25W, A–Weighted Measured at 1kHz, 112 dB
R
S
= 25Ω
A
M
Mute Attenuation Pin 6,11 at 2.5V 115 80 dB (min)
(1) All voltages are measured with respect to the GND pins (5, 10), unless otherwise specified.
(2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
(3) Typicals are measured at 25°C and represent the parametric norm.
(4) Limits are specifications that all parts are tested in production to meet the stated values.
(5) V
EE
must have at least −9V at its pin with reference to ground in order for the under-voltage protection circuitry to be disabled. In
addition, the voltage differential between V
CC
and V
EE
must be greater than 14V.
(6) AC Electrical Test; Refer to Test Circuit #2 .
(7) When using the isolated package (NDB), the θ
JC
is 2°C/W verses 1°C/W for the non-isolated package (NDL). This increased thermal
resistance from junction to case requires a lower supply voltage for decreased power dissipation within the package. Voltages higher
than ±26V maybe used but will require a heat sink with less than 1°C/W thermal resistance to avoid activating thermal shutdown during
normal operation.
(8) DC Electrical Test; Refer to Test Circuit #1 .
(9) The output dropout voltage, V
OD
, is the supply voltage minus the clipping voltage. Refer to the Clipping Voltage vs. Supply Voltage
graph in the TYPICAL PERFORMANCE CHARACTERISTICS section.
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