Datasheet

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LM4667, LM4667MMBD

www.ti.com

SNAS165C –SEPTEMBER 2003–REVISED MAY 2013

LM4667 Filterless High Efficiency 1.3W Switching Audio

Amplifier

Check for Samples: LM4667, LM4667MMBD

FEATURES

DESCRIPTION

The LM4667 is a fully integrated single-supply high

• No Output Filter Required for Inductive

efficiency switching audio amplifier. It features an

Transducers

innovative modulator that eliminates the LC output

• Selectable Gain of 6dB or 12dB

filter used with typical switching amplifiers.

• Very Fast Turn on Time: 5ms (typ)

Eliminating the output filter reduces parts count,

simplifies circuit design, and reduces board area. The

• Minimum External Components

LM4667 processes analog inputs with a delta-sigma

• "Click and Pop" Suppression Circuitry

modulation technique that lowers output noise and

• Micro-Power Shutdown Mode

THD when compared to conventional pulse width

modulators.

• Short Circuit Protection

• Space-Saving DSBGA and VSSOP Packages

The LM4667 is designed to meet the demands of

mobile phones and other portable communication

devices. Operating on a single 3V supply, it is

KEY SPECIFICATIONS

capable of driving 8Ω transducer loads at a

• Efficiency at 3V, 100mW into 8Ω Transducer

continuous average output of 450mW with less than

74% (typ)

1%THD+N. Its flexible power supply requirements

allow operation from 2.7V to 5.5V.

• Efficiency at 3V, 450mW into 8Ω Transducer

84% (typ)

The LM4667 has high efficiency with an 8Ω

• Efficiency at 5V, 1W into 8Ω Transducer 86%

transducer load compared to a typical Class AB

(typ)

amplifier. With a 3V supply, the IC's efficiency for a

100mW power level is 74%, reaching 84% at 450mW

• Total Quiescent Power Supply Current: 3.5mA

output power.

(typ)

The LM4667 features a low-power consumption

• Total Shutdown Power Supply Current: 0.01μA

shutdown mode. Shutdown may be enabled by

(typ)

driving the Shutdown pin to a logic low (GND).

• Single Supply Range: 2.7V to 5.5V

The LM4667 has fixed selectable gain of either 6dB

or 12dB. The LM4667 has short circuit protection

APPLICATIONS

against a short from the outputs to V

, GND, or

• Mobile Phones

across the outputs.

• PDAs

• Portable Electronic Devices

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (24 pages)

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LM4667, LM4667MMBD www.ti.com SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 LM4667 Filterless High Efficiency 1.3W Switching Audio Amplifier Check for Samples: LM4667, LM4667MMBD FEATURES DESCRIPTION • The LM4667 is a fully integrated single-supply high efficiency switching audio amplifier. It features an innovative modulator that eliminates the LC output filter used with typical switching amplifiers. Eliminating the output filter reduces parts count, simplifies circuit design, and reduces board area.
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LM4667, LM4667MMBD SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 www.ti.com Typical Application Figure 1. Typical Audio Amplifier Application Circuit Connection Diagrams Top View Top View 1 10 2 9 3 8 4 7 5 6 SHUTDOWN V02 IN- VDD NC GND IN+ GAIN SELECT Figure 2. Bump DSBGA Package See Package Number YZR0009AAA 2 Submit Documentation Feedback GND V01 Figure 3.
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LM4667, LM4667MMBD www.ti.com SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) (3) Supply Voltage (1) 6.0V −65°C to +150°C Storage Temperature VDD + 0.3V ≥ V ≥ GND - 0.3V Voltage at Any Input Pin (4) Internally Limited ESD Susceptibility (5) 7.
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LM4667, LM4667MMBD SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 www.ti.com Electrical Characteristics VDD = 5V (1) (2) The following specifications apply for VDD = 5V and RL = 15µH + 8Ω + 15µH unless otherwise specified. Limits apply for TA = 25°C.
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LM4667, LM4667MMBD www.ti.com SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 Electrical Characteristics VDD = 3V (1) (2) The following specifications apply for VDD = 3V and RL = 15µH + 8Ω + 15µH unless otherwise specified. Limits apply for TA = 25°C. Parameter IDD LM4667 Test Conditions Quiescent Power Supply Current VIN = 0V, No Load VIN = 0V, RL = 15µH + 8Ω + 15µH VSD = GND (6) Typ (3) Limit (4) (5) Units (Limits) 3.50 3.75 5.0 mA (max) ISD Shutdown Current 0.01 2.
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LM4667, LM4667MMBD SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 www.ti.com Typical Performance Characteristics 6 THD+N vs Frequency VDD = 5V, RL = 15µH + 8Ω + 15µH POUT = 100mW, 30kHz BW THD+N vs Frequency VDD = 3V, RL = 15µH + 8Ω + 15µH POUT = 100mW, 30kHz BW Figure 4. Figure 5. THD+N vs Frequency VDD = 3V, RL = 15µH + 4Ω + 15µH POUT = 300mW, 30kHz BW THD+N vs Power Out VDD = 5V, RL = 15µH + 8Ω + 15µH f = 1kHz, 22kHz BW Figure 6. Figure 7.
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LM4667, LM4667MMBD www.ti.com SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 Typical Performance Characteristics (continued) CMRR vs Frequency VDD = 5V, RL = 15µH + 8Ω + 15µH VCM = 300mVRMS Sine Wave, 30kHz BW CMRR vs Frequency VDD = 3V, RL = 15µH + 8Ω + 15µH VCM = 300mVRMS Sine Wave, 30kHz BW Figure 10. Figure 11. PSRR vs Frequency VDD = 5V, RL = 15µH + 8Ω + 15µH VRipple = 100mVRMS Sine Wave, 22kHz BW PSRR vs Frequency VDD = 3V, RL = 15µH + 8Ω + 15µH VRipple = 100mVRMS Sine Wave, 22kHz BW Figure 12.
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LM4667, LM4667MMBD SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 www.ti.com Typical Performance Characteristics (continued) 8 Efficiency and Power Dissipation vs Output Power VDD = 3V, RL = 15µH + 4Ω + 15µH, f = 1kHz, THD < 1% Gain Select Threshold VDD = 3V Figure 16. Figure 17. Gain Select Threshold VDD = 5V Gain Select Threshold vs Supply Voltage RL = 15µH + 8Ω + 15µH Figure 18. Figure 19.
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LM4667, LM4667MMBD www.ti.com SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 Typical Performance Characteristics (continued) Output Power vs Supply Voltage RL = 15µH + 16Ω + 15µH, f = 1kHz Shutdown Threshold VDD = 5V Figure 22. Figure 23. Shutdown Threshold VDD = 3V Shutdown Threshold vs Supply Voltage RL = 15µH + 8Ω + 15µH Figure 24. Figure 25. Supply Current vs Shutdown Voltage RL = 15µH + 8Ω + 15µH Supply Current vs Supply Voltage RL = 15µH + 8Ω + 15µH Figure 26. Figure 27.
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LM4667, LM4667MMBD SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 www.ti.com APPLICATION INFORMATION GENERAL AMPLIFIER FUNCTION The output signals generated by the LM4667 consist of two, BTL connected, output signals that pulse momentarily from near ground potential to VDD. The two outputs can pulse independently with the exception that they both may never pulse simultaneously as this would result in zero volts across the BTL load. The minimum width of each pulse is approximately 160ns.
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LM4667, LM4667MMBD www.ti.com SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 The rising and falling edges are necessarily short in relation to the minimum pulse width (160ns), having approximately 2ns rise and fall times, typical, depending on parasitic output capacitance. The inductive nature of the transducer load can also result in overshoot on one or both edges, clamped by the parasitic diodes to GND and VDD in each case.
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LM4667, LM4667MMBD SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 www.ti.com SINGLE-ENDED CIRCUIT CONFIGURATIONS Figure 28. Single-Ended Input with Low Gain Selection Configuration Figure 29.
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LM4667, LM4667MMBD www.ti.com SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 REFERENCE DESIGN BOARD SCHEMATIC Figure 30. In addition to the minimal parts required for the application circuit, a measurement filter is provided on the evaluation circuit board so that conventional audio measurements can be conveniently made without additional equipment.
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LM4667, LM4667MMBD SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 www.ti.com LM4667 DSBGA BOARD ARTWORK Figure 31. Composite View Figure 32.
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LM4667, LM4667MMBD www.ti.com SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 Figure 33. Top Layer Figure 34.
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LM4667, LM4667MMBD SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 www.ti.com LM4667 VSSOP BOARD ARTWORK Figure 35. Composite View Figure 36.
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LM4667, LM4667MMBD www.ti.com SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 Figure 37. Top Layer Figure 38.
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LM4667, LM4667MMBD SNAS165C – SEPTEMBER 2003 – REVISED MAY 2013 www.ti.com REVISION HISTORY Changes from Revision B (May 2013) to Revision C • 18 Page Changed layout of National Data Sheet to TI format ..........................................................................................................
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE MATERIALS INFORMATION www.ti.com 12-Aug-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) LM4667ITL/NOPB DSBGA YZR 9 250 178.0 8.4 LM4667MM/NOPB VSSOP DGS 10 1000 178.0 12.4 Pack Materials-Page 1 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 1.7 1.7 0.76 4.0 8.0 Q1 5.3 3.4 1.4 8.0 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 12-Aug-2013 *All dimensions are nominal Device Package Type Package Drawing LM4667ITL/NOPB DSBGA YZR LM4667MM/NOPB VSSOP DGS Pins SPQ Length (mm) Width (mm) Height (mm) 9 250 210.0 185.0 35.0 10 1000 210.0 185.0 35.
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MECHANICAL DATA YZR0009xxx D 0.600±0.075 E TLA09XXX (Rev C) D: Max = 1.545 mm, Min =1.484 mm E: Max = 1.545 mm, Min =1.484 mm 4215046/A NOTES: A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994. B. This drawing is subject to change without notice. www.ti.
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