Datasheet
LM432
SNOS538D –AUGUST 2000–REVISED MARCH 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)(3)
Suppy Voltage (V
S
) 20V
Storage Temperature −65°C to 150°C
Junction Temperature (T
J
) 150°C
ESD Human Body Model 2kV
Input Voltage Range −0.3V to 20V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) All voltages are measured with respect to GND = 0V
DC
, unless otherwise specified.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
Operating Ratings
(1)(2)
Temperature Range −40°C to 85°C
Supply Voltage
(3)
2.5V to 16V
Thermal Resistance(θ
JA
) 162°C/W
(1) Operating Rating indicate conditions for which the device is functional. These rating do not ensure specific performance limits. For
ensured specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test
conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.
(2) All voltages are measured with respect to GND = 0V
DC
, unless otherwise specified.
(3) Minimum value of operating voltage is for Amplifier B only.
Electrical Characteristics
The following specifications apply for both amplifiers at V
S
= 5V, V
CM
= 2.5V, V
O
= 2.5V, R
L
= ∞, and T
J
= 25°C, unless
otherwise noted.
Symbol Parameter Conditions Min
(1)
Typ
(2)
Max
(1)
Units
OP Amp Circuitry
V
OS
Input Offset Voltage Amplifier B only −4 0.6 4 mV
I
OS
Input Offset Current Amplifier B only 1 50 nA
I
B
Input Bias Current Amplifier B only 3 150 nA
V
CM
Common-Mode Input Voltage Range Amplifier B only, CMRR > 50dB 0 V
S
-1 V
I
S
Power Supply Current Total for both amplifiers 150 500 µA
A
V
V
S
= 16V, 1V < V
O
< 11V,
Voltage Gain 65 100 dB
R
L
= 10kΩ connected to V
S
/2
V
OL
Output Voltage Low 2 50 mV
V
OH
Output Voltage High V
S
– 1.5 V
S
– 1.3 V
I
SOURCE
Output Current Source 20 30 mA
I
SINK
Output Current Sink 5 11 mA
Reference Circuitry For Op Amp A (The following specifications apply for I
Z
= 200µA and T
J
= 25°C, unless otherwise noted.)
V
Z
Reference Voltage at IN
+
Terminal 2.450 2.5 2.550 V
V
ZDEV
Reference Voltage Deviation at IN
+
−40°C ≤ T
J
≤ 85°C 4 65 mV
Terminal Over Temperature
(3)(4)
I
Z (MIN)
Minimum Cathode Current for Regulation
150 200 µA
at IN
+
(V
Z
) Terminal
r
z
Dynamic Output Impedance
(5)
200µA < I
Z
< 1mA, Freq = 0Hz 0.2 Ω
(1) Ensured to Average Outgoing Quality Level (AOQL).
(2) Typicals represent the most likely parametic norm.
(3) Reference voltage deviation, V
ZDEV
, is defined as the maximum variation of the reference input voltage over the full temperature range.
(4) Typical Temperature drift ΔV/ΔT = 12.8ppm/°C
(5) The Dynamic Output Impendance, r
z
, is defined as r
z
= ΔV
Z
/ΔI
Z
.
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