Datasheet

Table 23-5. Detailed Power Specifications (continued)
Unit
3.0 V V
BAT
2.5 V V
DD25
3.3 V V
DD
,
V
DDA
, V
DDPHY
Conditions
Parameter
Name
Parameter
MaxNomMaxNomMaxNom
µApending
a
160000V
BAT
= 3.0 V
V
DD
= 0 V
V
DD25
= 0 V
V
DDA
= 0 V
V
DDPHY
= 0 V
Peripherals = All OFF
System Clock = OFF
Hibernate Module = 32 kHz
Hibernate
mode
I
DD_HIBERNATE
a. Pending characterization completion.
23.1.6 Flash Memory Characteristics
Table 23-6. Flash Memory Characteristics
UnitMaxNomMinParameter NameParameter
cycles-100,00010,000Number of guaranteed program/erase cycles
before failure
a
PE
CYC
years--10Data retention at average operating temperature
of 85˚C (industrial) or 105˚C (extended)
T
RET
µs--20Word program timeT
PROG
ms--20Page erase timeT
ERASE
ms250--Mass erase timeT
ME
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
23.1.7 Hibernation
Table 23-7. Hibernation Module DC Characteristics
UnitValueParameter NameParameter
V2.35Low battery detect voltageV
LOWBAT
kΩ200WAKE internal pull-up resistorR
WAKEPU
23.1.8 Ethernet Controller
Table 23-8. Ethernet Controller DC Characteristics
UnitValueParameter NameParameter
Ω12.4K ± 1 %Value of the pull-down resistor on the ERBIAS pinR
EBIAS
23.2 AC Characteristics
23.2.1 Load Conditions
Unless otherwise specified, the following conditions are true for all timing measurements. Timing
measurements are for 4-mA drive strength.
751June 18, 2012
Texas Instruments-Production Data
Stellaris
®
LM3S8962 Microcontroller
NRND: Not recommended for new designs.