Datasheet

LM384
SNAS547C –FEBRUARY 1995–REVISED APRIL 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
Supply Voltage 28V
Peak Current 1.3A
Power Dissipation
(3)(4)
1.67W
Input Voltage ±0.5V
Storage Temperature −65°C to +150°C
Operating Temperature 0°C to +70°C
Lead Temperature (Soldering, 10 sec.) 260°C
Thermal Resistance θ
JC
30°C/W
θ
JA
79°C/W
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) The maximum junction temperature of the LM384 is 150°C.
(4) The package is to be derated at 15°C/W junction to heat sink pins.
Electrical Characteristics
(1)
Symbol Parameter Conditions Min Typ Max Units
Z
IN
Input Resistance 150 kΩ
I
BIAS
Bias Current Inputs Floating 100 nA
A
V
Gain 40 50 60 V/V
P
OUT
Output Power THD = 10%, R
L
= 8Ω 5 5.5 W
I
Q
Quiescent Supply Current 8.5 25 mA
V
OUT Q
Quiescent Output Voltage 11 V
BW Bandwidth P
OUT
= 2W, R
L
= 8Ω 450 kHz
V
+
Supply Voltage 12 26 V
I
SC
Short Circuit Current
(2)
1.3 A
PSRR
RTO
Power Supply Rejection Ratio
(3)
31 dB
THD Total Harmonic Distortion P
OUT
= 4W, R
L
= 8Ω 0.25 1.0 %
(1) V
+
= 22V and T
A
= 25°C operating with a Staver V7 heat sink for 30 seconds.
(2) Output is fully protected against a shorted speaker condition at all voltages up to 22V.
(3) Rejection ratio referred to the output with C
BYPASS
= 5 μF, freq = 120 Hz.
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