Datasheet

LM2578A, LM3578A

SNVS767E –AUGUST 2000–REVISED APRIL 2013

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Functional Diagram

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1)(2)

Total Supply Voltage 50V

Collector Output to Ground −0.3V to +50V

Emitter Output to Ground

(3)

−1V to +50V

Power Dissipation

(4)

Internally limited

Output Current 750 mA

Storage Temperature −65°C to +150°C

Lead Temperature (soldering, 10 seconds) 260°C

Maximum Junction Temperature 150°C

ESD Tolerance

(5)

2 kV

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not

apply when operating the device beyond its rated operating conditions.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3) For T

≥ 100°C, the Emitter pin voltage should not be driven more than 0.6V below ground (see Application Information).

(4) At elevated temperatures, devices must be derated based on package thermal resistance. The device in the 8-pin DIP must be derated

at 95°C/W, junction to ambient. The device in the SOIC package must be derated at 150°C/W, junction-to-ambient.

(5) Human body model, 1.5 kΩ in series with 100 pF.

Operating Ratings

Ambient Temperature Range LM2578A −40°C ≤ T

≤+85°C

LM3578A 0°C ≤ T

≤+70°C

Junction Temperature Range LM2578A −40°C ≤ T

≤+125°C

LM3578A 0°C ≤ T

≤+125°C

Product Folder Links: LM2578A LM3578A