Datasheet

LM3526
SNVS054E –FEBRUARY 2000–REVISED MARCH 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Typical Operating Circuit and Connection Diagram
Figure 1. LM3526-H
Figure 2. LM3526-L
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