Datasheet

LM3475
www.ti.com SNVS239B –OCTOBER 2004–REVISED MARCH 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
V
IN
−0.3V to 16V
PGATE −0.3V to 16V
FB −0.3V to 5V
EN −0.3V to 16V
Storage Temperature −65°C to 150°C
Power Dissipation
(3)
440mW
ESD Susceptibilty
Human Body Model
(4)
2.5kV
Lead Temperature
Vapor Phase (60 sec.) 215°C
Infared (15 sec.) 220°C
(1) Absolute maximum ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the
device is intended to be functional. For specifications and test conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) The maximum allowable power dissipation is a function of the maximum junction temperature, T
J_MAX
, the junction-to-ambient thermal
resistance, θ
JA
and the ambient temperature, T
A
. The maximum allowable power dissipation at any ambient temperature is calculated
using:P
D_MAX
= (T
J_MAX
- T
A
)/θ
JA
. The maximum power dissipation of 0.44W is determined using T
A
= 25°C, θ
JA
= 225°C/W, and T
J_MAX
= 125°C.
(4) The human body model is a 100 pF capacitor discharged through a 1.5kΩ resistor into each pin.
Operating Ratings
(1)
Supply Voltage 2.7V to 10V
Operating Junction Temperature −40°C to +125°C
(1) Absolute maximum ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the
device is intended to be functional. For specifications and test conditions, see the Electrical Characteristics.
Electrical Characteristics
Specifications in Standard type face are for T
J
= 25°C, and in bold type face apply over the full Operating Temperature
Range (T
J
= −40°C to +125°C). Unless otherwise specified, V
IN
= EN = 5.0V. Datasheet min/max specification limits are
specified by design, test, or statistical analysis.
Symbol Parameter Conditions Min Typ Max Unit
I
Q
Quiescent Current EN = V
IN
(PGATE Open) 170 260 320
µA
EN = 0V 4 7 10
V
FB
Feedback Voltage 0.788 0.8 0.812 V
%ΔV
FB
/ΔV
IN
Feedback Voltage Line
2.7V < V
IN
< 10V 0.01 %/V
Regulation
V
HYST
Comparator Hysteresis 2.7V < V
IN
< 10V 21 28
mV
−40°C to +125°C 21 32
I
FB
FB Bias Current 50 600 nA
Enable Threshold Voltage Increasing 1.2 1.5 1.8 V
Vth
EN
Hysteresis 365 mV
I
EN
Enable Leakage Current EN = 10V .025 1 µA
Source
2.8
I
SOURCE
= 100mA
R
PGATE
Driver Resistance Ω
Sink
1.8
I
Sink
= 100mA
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