Datasheet

TEMPERATURE (°C)
G
M
(S)
140
130
120
110
100
90
-50 -14 22 58 94 130
TEMPERATURE (°C)
V
BIAS
(V)
25
22
19
16
13
10
-50 -14 22 58 94 130
BIAS High
BIAS Low
TEMPERATURE (°C)
V
LIM
(V)
1.505
1.503
1.501
1.499
1.497
1.495
-50 -14 22 58 94 130
TEMPERATURE (°C)
K
M
0.510
0.504
0.498
0.492
0.486
0.480
-50 -14 22 58 94 130
TEMPERATURE (°C)
R
DS-ON
()
40
36
32
28
24
20
-50 -14 22 58 94 130
TEMPERATURE (°C)
t
LEB
(ns)
150
146
142
138
134
130
-50 -14 22 58 94 130
LM3450
SNVS681D –NOVEMBER 2010–REVISED MAY 2013 www.ti.com
TYPICAL PERFORMANCE CHARACTERISTICS
T
A
=+25°C and V
CC
= 14V unless otherwise specified
HOLD R
DSON
vs. Junction Temperature Leading Edge Blanking vs. Junction Temperature
Figure 2. Figure 3.
Current Limit Threshold vs. Junction Temperature Multiplier Gain vs. Junction Temperature
V
AC
= 3V; V
CMP
= V
THM
+ 1.5V V
AC
= 3V; V
CMP
= V
THM
+ 1.5V
Figure 4. Figure 5.
Transconductance BIAS Voltage vs. Junction Temperature
V
FB
= 2.5V; ΔV
FB
= 50mV High @ V
CC
< V
CCFALL
; Low @ V
CC
> V
CCRISE
Figure 6. Figure 7.
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