Datasheet

LM3410, LM3410Q
www.ti.com SNVS541G –OCTOBER 2007–REVISED MAY 2013
Table 5. Operating Conditions
V
IN
3.3V
V
OUT
16.7V
I
LED
50mA
V
D
0.45V
f
SW
1.60MHz
I
Q
3mA
t
RISE
10nS
t
FALL
10nS
R
DSON
225mΩ
L
DCR
75mΩ
D 0.82
I
IN
0.31A
ΣP
COND
+ P
SW
+ P
DIODE
+ P
IND
+ P
Q
= P
LOSS
(36)
Quiescent Power Loss:
P
Q
= I
Q
x V
IN
= 10 mW (37)
Switching Power Loss:
P
SWR
= 1/2(V
OUT
x I
IN
x f
SW
x t
RISE
) ≊ 40 mW (38)
P
SWF
= 1/2(V
OUT
x I
IN
x f
SW
x t
FALL
) ≊ 40 mW (39)
P
SW
= P
SWR
+ P
SWF
= 80 mW (40)
Internal NFET Power Loss:
R
DSON
= 225 mΩ (41)
P
CONDUCTION
= I
IN
2
x D x R
DSON
= 17 mW (42)
I
IN
= 310 mA (43)
Diode Loss:
V
D
= 0.45V (44)
P
DIODE
= V
D
x I
LED
= 23 mW (45)
Inductor Power Loss:
R
DCR
= 75 mΩ (46)
P
IND
= I
IN
2
x R
DCR
= 7 mW (47)
Total Power Losses are:
Table 6. Power Loss Tabulation
V
IN
3.3V
V
OUT
16.7V
I
LED
50mA P
OUT
825W
V
D
0.45V P
DIODE
23mW
f
SW
1.6MHz
I
Q
10nS P
SWR
40mW
t
RISE
10nS P
SWF
40mW
I
Q
3mA P
Q
10mW
R
DSON
225mΩ P
COND
17mW
L
DCR
75mΩ P
IND
7mW
D 0.82
η 85% P
LOSS
137mW
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