Datasheet
LM3151, LM3152, LM3153
www.ti.com
SNVS562G –SEPTEMBER 2008–REVISED MARCH 2011
ELECTRICAL CHARACTERISTICS (continued)
Limits in standard type are for T
J
= 25°C only; limits in boldface type apply over the junction temperature (T
J
) range of -40°C
to +125°C. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent
the most likely parametric norm at T
J
= 25°C, and are provided for reference purposes only. Unless otherwise stated the
following conditions apply: V
IN
= 18V.
Symbol Parameter Conditions Min Typ Max Units
Soft-Start
I
SS
SS Pin Source Current V
SS
= 0V 5.9 7.7 9.5 mA
I
SS-DIS
SS Pin Discharge Current 200 µA
Current Limit
V
CL
Current Limit Voltage Threshold 175 200 225 mV
ON/OFF Timer
t
ON-MIN
ON Timer Minimum Pulse Width 200 ns
t
OFF
OFF Timer Minimum Pulse Width 370 525 ns
Enable Input
V
EN
EN Pin Input Threshold Trip Point V
EN
Rising 1.14 1.20 1.26 V
V
EN-HYS
EN Pin threshold Hysteresis V
EN
Falling 120 mV
Boost Diode
I
BST
= 2 mA 0.7 V
V
f
Forward Voltage
I
BST
= 30 mA 1 V
Thermal Characteristics
Thermal Shutdown Rising 165 °C
T
SD
Thermal Shutdown Hysteresis Falling 15 °C
4 Layer JEDEC Printed Circuit 40
Board, 9 Vias, No Air Flow
θ
JA
Junction to Ambient °C/W
2 Layer JEDEC Printed Circuit 140
Board. No Air Flow
θ
JC
Junction to Case No Air Flow 4 °C/W
ELECTRICAL CHARACTERISTICS 3.3V OUTPUT OPTION
Symbol Parameter Conditions Min Typ Max Units
V
OUT
Output Voltage 3.234 3.3 3.366 V
V
OUT-OV
Output Voltage Over-Voltage Threshold 3.83 4.00 4.17 V
LM3151-3.3 42
V
IN-MAX
Maximum Input Voltage
(1)
LM3152-3.3 33 V
LM3153-3.3 18
LM3151-3.3 6
V
IN-MIN
Minimum Input Voltage
(1)
LM3152-3.3 6 V
LM3153-3.3 8
LM3151-3.3, R
ON
= 115 kΩ 250
f
S
Switching Frequency LM3152-3.3, R
ON
= 51 kΩ 500 kHz
LM3153-3.3, R
ON
= 32 kΩ 750
LM3151-3.3, R
ON
= 115 kΩ 730
t
ON
On-Time LM3152-3.3, R
ON
= 51 kΩ 400 ns
LM3153-3.3, R
ON
= 32 kΩ 330
R
FB
FB Resistance to Ground 566 kΩ
(1) The input voltage range is dependent on minimum on-time, off-time, and therefore frequency, and is also affected by optimized
MOSFET selection.
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