Datasheet
LM3046
www.ti.com
SNLS372B –JULY 1999–REVISED MARCH 2013
Electrical Characteristics
(1)
Parameter Conditions Min Typ Max Units
Collector to Base Breakdown Voltage (V
(BR)CBO
) I
C
= 10 μA, I
E
= 0 20 60 V
Collector to Emitter Breakdown Voltage (V
(BR)CEO
) I
C
= 1 mA, I
B
= 0 15 24 V
Collector to Substrate Breakdown Voltage (V
(BR)CIO
) I
C
= 10 μA, I
CI
= 0 20 60 V
Emitter to Base Breakdown Voltage (V
(BR)EBO
) I
E
10 μA, I
C
= 0 5 7 V
Collector Cutoff Current (I
CBO
) V
CB
= 10V, I
E
= 0 0.002 40 nA
Collector Cutoff Current (I
CEO
) V
CE
= 10V, I
B
= 0 0.5 μA
V
CE
= 3V I
C
= 10 mA 100
Static Forward Current Transfer Ratio (Static Beta) (h
FE
) I
C
= 1 mA 40 100
I
C
= 10 μA 54
Input Offset Current for Matched Pair Q
1
and Q
2
|I
O1
− I
IO2
| V
CE
= 3V, I
C
= 1 mA 0.3 2 μA
V
CE
= 3V I
E
= 1 mA 0.715 V
Base to Emitter Voltage (V
BE
)
I
E
= 10 mA 0.800
Magnitude of Input Offset Voltage for Differential Pair |V
BE1
V
CE
= 3V, I
C
= 1 mA 0.45 5 mV
− V
BE2
|
Magnitude of Input Offset Voltage for Isolated Transistors 5
V
CE
= 3V, I
C
= 1 mA 0.45 mV
|V
BE3
− V
BE4
|, |V
BE4
− V
BE5
|, |V
BE5
− V
BE3
|
Temperature Coefficient of Base to Emitter Voltage
V
CE
= 3V, I
C
= 1 mA −1.9 mV/°C
(1)
Collector to Emitter Saturation Voltage (V
CE(SAT)
) I
B
= 1 mA, I
C
= 10 mA 0.23 V
Temperature Coefficient of Input Offset Voltage
V
CE
= 3V, I
C
= 1 mA 1.1 μV/°C
(2)
f = 1 kHz, V
CE
= 3V, I
C
= 100
Low Frequency Noise Figure (NF) 3.25 dB
μA, R
S
= 1 kΩ
LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS
Forward Current Transfer Ratio (h
fe
) 110
Short Circuit Input Impednace (h
ie
) 3.5 kΩ
f = 1 kHz, V
CE
= 3V, I
C
= 1
mA
Open Circuit Output Impedance (h
oe
) 15.6 μmho
Open Circuit Reverse Voltage Transfer Ratio (h
re
) 1.8 x 10
−4
ADMITTANCE CHARACTERISTICS
Forward Transfer Admittance (Y
fe
) 31 − j 1.5
Input Admittance (Y
ie
) 0.3+J 0.04
f = 1 MHz, V
CE
= 3V, I
C
= 1
Output Admittance (Y
oe
) 0.001+j 0.03
mA
See
Reverse Transfer Admittance (Y
re
)
Figure 16
Gain Bandwidth Product (f
T
) V
CE
= 3V, I
C
= 3 mA 300 550
Emitter to Base Capacitance (C
EB
) V
EB
= 3V, I
E
= 0 0.6 pF
Collector to Base Capacitance (C
CB
) V
CB
= 3V, I
C
= 0 0.58 pF
Collector to Substrate Capacitance (C
CI
) V
CS
= 3V, I
C
= 0 2.8 pF
(1) (T
A
= 25°C unless otherwise specified)
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