Datasheet

LM2936
SNOSC48N –JUNE 2000–REVISED MARCH 2013 www.ti.com
Connection Diagrams
Figure 1. PFM Figure 2. SOT-223
Top View Top View
See Package Number NDP0003B See Package Number DCY0004A
Figure 3. 8-Pin SOIC (D) Figure 4. 8-Pin SOIC (D)
Top View Top View
See Package Number D0008A See Package Number D0008A
Figure 5. TO-92 Figure 6. 8-Pin VSSOP (DGK)
Bottom View Top View
See Package Number LP0003A See Package Number DGK0008A
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
Input Voltage (Survival) +60V, −50V
ESD Susceptibility
(3)
2000V
Power Dissipation
(4)
Internally limited
Junction Temperature (T
Jmax
) 150°C
Storage Temperature Range −65°C to +150°C
Lead Temperature (Soldering, 10 sec.) 260°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not
apply when operating the device beyond its specified operating ratings.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
(3) Human body model, 100 pF discharge through a 1.5 kΩ resistor.
(4) The maximum power dissipation is a function of T
Jmax
, θ
JA
, and T
A
. The maximum allowable power dissipation at any ambient
temperature is P
D
= (T
Jmax
− T
A
)/θ
JA
. If this dissipation is exceeded, the die temperature will rise above 150°C and the LM2936 will go
into thermal shutdown.
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