Datasheet
LM27x7
HG
BOOT
I
SEN
LG
PGND
FB
V
CC
SD
PWGD
FREQ
SS
SGND
EAO
PGND
+5V
V
IN
= 3.3V
V
O
= 1.2V@5A
C
O
1,2
2200PF
6.3V, 2.8A
1.5 PH
6.1 A, 9.6 m:
R
FB2
C
C2
R
C1
R
CS
C
SS
R
FADJ
R
IN
C
IN
D1
C
BOOT
Q1
Q2
10PF
6.3V
10k
2.2k
10k
392k
2.2p
180p
12n
63.4k
2.2PF
10:
0.1P
C
IN
1,2
L1
+
C
C1
R
FB1
Si4884DY
Si4884DY
LM2727, LM2737
www.ti.com
SNVS205D –AUGUST 2002–REVISED MARCH 2013
LM2727/LM2737 N-Channel FET Synchronous Buck Regulator Controller for Low Output
Voltages
Check for Samples: LM2727, LM2737
1
FEATURES
DESCRIPTION
The LM2727 and LM2737 are high-speed,
2
• Input Power from 2.2V to 16V
synchronous, switching regulator controllers. They
• Output Voltage Adjustable Down to 0.6V
are intended to control currents of 0.7A to 20A with
• Power Good flag, Adjustable Soft-Start and
up to 95% conversion efficiencies. The LM2727
Output Enable for Easy Power Sequencing
employs output over-voltage and under-voltage latch-
off. For applications where latch-off is not desired, the
• Output Over-Voltage and Under-Voltage Latch-
LM2737 can be used. Power up and down
Off (LM2727)
sequencing is achieved with the power-good flag,
• Output Over-Voltage and Under-Voltage Flag
adjustable soft-start and output enable features. The
(LM2737)
LM2737 and LM2737 operate from a low-current 5V
bias and can convert from a 2.2V to 16V power rail.
• Reference Accuracy: 1.5% (0°C - 125°C)
Both parts utilize a fixed-frequency, voltage-mode,
• Current Limit Without Sense Resistor
PWM control architecture and the switching
• Soft Start
frequency is adjustable from 50kHz to 2MHz by
• Switching Frequency from 50 kHz to 2 MHz adjusting the value of an external resistor. Current
limit is achieved by monitoring the voltage drop
• TSSOP-14 Package
across the on-resistance of the low-side MOSFET,
which enhances low duty-cycle operation. The wide
APPLICATIONS
range of operating frequencies gives the power
• Cable Modems
supply designer the flexibility to fine-tune component
size, cost, noise and efficiency. The adaptive, non-
• Set-Top Boxes/ Home Gateways
overlapping MOSFET gate-drivers and high-side
• DDR Core Power
bootstrap structure helps to further maximize
• High-Efficiency Distributed Power
efficiency. The high-side power FET drain voltage can
be from 2.2V to 16V and the output voltage is
• Local Regulation of Core Power
adjustable down to 0.6V.
Typical Application
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2002–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.