Datasheet

IN
LEN
Shoot-through
Protection
V
CC
LG
GND
Logic
CB
HG
SW
+
-
150k
150k
Level
Shifter
10k
10k
HG
CB
IN
LG
V
CC
LEN
GND
SW
1
2
3
4
8
7
6
5
LM27222
SNVS306B –SEPTEMBER 2004–REVISED MARCH 2013 www.ti.com
Connection Diagram
Figure 1. Top View
SOIC-8 (Package # D0008A) θ
JA
= 172°C/W
or
WSON-8 (Package # NGT0008A) θ
JA
= 39°C/W
PIN DESCRIPTIONS
Pin # Pin Name Pin Function
1 SW High-side driver return. Should be connected to the common node of high and low-side MOSFETs.
2 HG High-side gate drive output. Should be connected to the high-side MOSFET gate. Pulled down internally to
SW with a 10K resistor to prevent spurious turn on of the high-side MOSFET when the driver is off.
3 CB Bootstrap. Accepts a bootstrap voltage for powering the high-side driver.
4 IN Accepts a PWM signal from a controller. Active High. Pulled down internally to GND with a 150K resistor to
prevent spurious turn on of the high-side MOSFET when the controller is inactive.
5 LEN Low-side gate enable. Active High. Pulled down internally to GND with a 150K resistor to prevent spurious
turn-on of the low-side MOSFET when the controller is inactive.
6 V
CC
Connect to +5V supply.
7 LG Low-side gate drive output. Should be connected to low-side MOSFET gate. Pulled down internally to GND
with a 10K resistor to prevent spurious turn on of the low-side MOSFET when the driver is off.
8 GND Ground.
Block Diagram
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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