Datasheet

LM2660
SNVS135D –SEPTEMBER 1999–REVISED MAY 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
Supply Voltage (V+ to GND, or GND to OUT) 6V
LV (OUT − 0.3V) to (GND + 3V)
FC, OSC The least negative of (OUT − 0.3V)
or (V+ − 6V) to (V+ + 0.3V)
V+ and OUT Continuous Output Current 120 mA
Output Short-Circuit Duration to GND
(3)
1 sec.
Package
SOIC (D) VSSOP (DGK)
Power Dissipation (T
A
= 25°C)
(4)
735 mW 500 mW
T
J
Max
(4)
150°C 150°C
θ
JA
(4)
170°C/W 250°C/W
Operating Junction Temperature Range −40°C to +85°C
Storage Temperature Range −65°C to +150°C
Lead Temperature (Soldering, 10 seconds) 300°C
ESD Rating 2 kV
(1) Absolute maximum ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when
operating the device beyond its rated operating conditions.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) OUT may be shorted to GND for one second without damage. However, shorting OUT to V+ may damage the device and should be
avoided. Also, for temperatures above 85°C, OUT must not be shorted to GND or V+, or device may be damaged.
(4) The maximum allowable power dissipation is calculated by using P
DMax
= (T
JMax
− T
A
)/θ
JA
, where T
JMax
is the maximum junction
temperature, T
A
is the ambient temperature, and θ
JA
is the junction-to-ambient thermal resistance of the specified package.
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