Datasheet

LM2650
SNVS133C –JUNE 1999–REVISED APRIL 2013 www.ti.com
Absolute Maximum Ratings
(1)(2)
(All voltages are referenced to the PGND and GND pins.)
DC Voltage at PV
IN
and V
IN
20V
DC Voltage at SD, SLEEP LOGIC and SYNC 15V
DC current into SW ±7.5A
Junction Temperature Limited by the IC
DC Power Dissipation
(3)
1.28W
Storage Temperature −65°C to +150°C
Soldering Time, Temperature
(4)
Wave (4 seconds) 260°C
Infrared (10 seconds) 240°C
Vapor Phase (75 seconds) 219°C
ESD Susceptibility
(5)
1.3 kV
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which the
device operates correctly. Operating ratings do not imply performance limits. For performance limits and associated test conditions, see
the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) This rating is calculated using the formula P
DCmax
= (T
Jmax
− T
A
) / θ
JA
, where P
DCmax
is the absolute maximum power dissipation, T
Jmax
is the maximum junction temperature, and θ
JA
is the junction ot ambient thermal resistance of the package. The P
DCmax
rating of 1.28W
results from substituting 170°C, 70°C and 78°C/W for T
Jmax
, T
A
and θ
JA
respectively. A θ
JA
of 78°C represents the worst condition of no
heat sinking of the DW0024B small-outline package. Heat sinking allows the safe dissipation of more power. See Application Notes on
thermal management. The LM2650 actively limits its junction temperature to about 170°C.
(4) For detailed information on soldering plastic small-outline packages, refer to the Packaging Databook published by Texas Instruments.
(5) ESD is applied using the human-body model, a 100pF capacitor discharged through a 1.5kΩ resistor.
Operating Ratings
(1)
Supply Voltage Range (PV
IN
and V
IN
) 4.5V to 18V
Junction Temperature Range −40°C to +125°C
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which the
device operates correctly. Operating ratings do not imply performance limits. For performance limits and associated test conditions, see
the Electrical Characteristics.
Electrical Characteristics
V
PVIN
= 15V, V
SLEEP LOGIC
= 0V and V
SD
= 0V unless superseded under Conditions. Typicals and limits appearing in plain type
apply for T
A
= T
J
= +25°C. Limits appearing in boldface type apply over the full junction temperature range shown under
Operating Ratings.
Symbol Parameter Conditions Typ
(1)
Limit
(2)
Units
V
OUT
Output Voltage R1 = 75 kΩ, 1%, 5.00 V
R2 = 25 kΩ, 1%, 4.80/4.75 V(min)
7.5V ≤ V
PVIN
≤ 18V 5.20/5.25 V(max)
0.12A ≤ I
LOAD
≤ 3A
η1 System Efficiency I
LOAD
= 1A, T
A
= 25°C,
94 %
F
OSC
Not Adjusted
η2 System Efficiency I
LOAD
= 3A, T
A
= 25°C,
89 %
F
OSC
Not Adjusted
V
REF
Reference Voltage V
SLEEPLOGIC
= 3V
(3)
1.281/1.294 V(min)
1.25
1.219/1.206 V(max)
I
Q
Quiescent Current in PWM mode V
FB
= V
REF
4.0 mA
−20mV
(4)
6.50/7.0 mA(max)
I
QS
Quiescent Current in Sleep mode IV
FB
= V
REF
−20mV, 850 μA
V
SLEEPLOGIC
= 3V
(4)
1.35/1.60 mA(max)
(1) A typical is the center of characterization data taken at T
A
= T
J
= 25°C.
(2) Tested at T
A
= T
J
= 125°C and statistical correlation for room temperature and cold limits.
(3) V
REF
is measured at SLEEP OUT ADJ.
(4) Quiescent current is the total current flowing into the P
VIN
and V
IN
pins. I
Q
includes the current used to drive the gates of the two NMOS
power FETs at the nominal switching frequency. I
QS
includes no such current.
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