Datasheet

LM2586
SNVS121D MAY 1996REVISED APRIL 2013
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Connection Diagrams
Figure 1. Bent, Staggered Leads Figure 2. Bent, Staggered Leads
7-Lead TO-220 (NDZ) 7-Lead TO-220 (NDZ)
Top View Side View
See Package Number NDZ0007B
Figure 3. 7-Lead DDPAK (KTW) Figure 4. 7-Lead DDPAK (KTW)
Top View Side View
See Package Number KTW0007B
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
Input Voltage 0.4V V
IN
45V
Switch Voltage 0.4V V
SW
65V
Switch Current
(3)
Internally Limited
Compensation Pin Voltage 0.4V V
COMP
2.4V
Feedback Pin Voltage 0.4V V
FB
2 V
OUT
ON /OFF Pin Voltage 0.4V V
SH
6V
Sync Pin Voltage 0.4V V
SYNC
2V
Power Dissipation
(4)
Internally Limited
Storage Temperature Range 65°C to +150°C
Lead Temperature (Soldering, 10 sec.) 260°C
Maximum Junction Temperature
(4)
150°C
Minimum ESD Rating (C = 100 pF, R = 1.5 k) 2 kV
(1) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. These ratings apply when the current is
limited to less than 1.2 mA for pins 1, 2, 3, and 6. Operating ratings indicate conditions for which the device is intended to be functional,
but device parameter specifications may not be ensured under these conditions. For ensured specifications and test conditions, see the
Electrical Characteristics.
(3) Note that switch current and output current are not identical in a step-up regulator. Output current cannot be internally limited when the
LM2586 is used as a step-up regulator. To prevent damage to the switch, the output current must be externally limited to 3A. However,
output current is internally limited when the LM2586 is used as a flyback regulator (see the Application Hints section for more
information).
(4) The junction temperature of the device (T
J
) is a function of the ambient temperature (T
A
), the junction-to-ambient thermal resistance
(θ
JA
), and the power dissipation of the device (P
D
). A thermal shutdown will occur if the temperature exceeds the maximum junction
temperature of the device: P
D
× θ
JA
+ T
A(MAX)
T
J(MAX)
. For a safe thermal design, check that the maximum power dissipated by the
device is less than: P
D
[T
J(MAX)
T
A(MAX)
]/θ
JA
. When calculating the maximum allowable power dissipation, derate the maximum
junction temperature—this ensures a margin of safety in the thermal design.
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