Datasheet
LM25061
SNVS611E –FEBRUARY 2011–REVISED MARCH 2013
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Electrical Characteristics (continued)
Limits in standard type are for T
J
= 25°C only; limits in boldface type apply over the junction temperature (T
J
) range of -40°C
to +85°C. Minimum and Maximum limits are ensured through test, design, or statistical correlation. Typical values represent
the most likely parametric norm at T
J
= 25°C, and are provided for reference purposes only. Unless otherwise stated the
following conditions apply: VIN = 12V.
Symbol Parameter Conditions Min. Typ. Max. Units
Gate Control (GATE pin)
I
GATE
Source current Normal Operation -27 -20 -13 µA
Sink current UVLO = 1V 1.5 2 2.7 mA
VIN - SENSE = 150 mV or VIN < 160 260 375 mA
POR, V
GATE
= 5V
V
GATE
Gate output voltage in normal operation GATE voltage with respect to ground 18 19.5 21 V
Current Limit
V
CL
Threshold voltage VIN-SENSE voltage 45 50 55 mV
t
CL
Response time VIN-SENSE stepped from 0 mV to 15 µs
80 mV
I
SENSE
SENSE input current Enabled, SENSE = OUT 23 µA
Disabled, OUT = 0V 12
Enabled, OUT = 0V 62
Circuit Breaker
V
CB
Threshold voltage VIN - SENSE 75 95 110 mV
t
CB
Response time VIN - SENSE stepped from 0 mV to 0.19 0.36 µs
150 mV, time to GATE low, no load
Timer (TIMER pin)
V
TMRH
Upper threshold 1.60 1.72 1.85 V
V
TMRL
Lower threshold Restart cycles (LM25061-2) 0.9 1.0 1.1 V
End of 8th cycle (LM25061-2) 0.3 V
Re-enable Threshold (LM25061-1) 0.3 V
I
TIMER
Insertion time current -7.5 -5.5 -3.5 µA
Sink current, end of insertion time TIMER pin = 2V 1.5 2 2.5 mA
Fault detection current -110 -80 -50 µA
Fault sink current 1.6 2.5 3.4 µA
DC
FAULT
Fault Restart Duty Cycle LM25061-2 only 0.67 %
t
FAULT
Fault to GATE low delay TIMER pin reaches the upper 20 µs
threshold
FB Pin
FB
TH
FB threshold UVLO = 2V 1.145 1.17 1.195 V
FB
HYS
FB hysteresis current FB = 2V -28 -22 -17 µA
FB
DEL
FB delay Delay to PGD high 100 ns
Delay to PGD low 110
FB
BIAS
FB bias current FB = 1V 1 µA
Power Good (PGD pin)
PGD
VOL
Output low voltage I
SINK
= 2 mA 15 30 mV
PGD
IOH
Off leakage current V
PGD
= 17V 1 µA
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