Datasheet
LM21215A
SNOSB87B –MARCH 2011–REVISED MARCH 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1)(2)
PVIN
(3)
, AVIN to GND −0.3V to +6V
SW
(4)
, EN, FB, COMP, PGOOD, SS/TRK to GND −0.3V to PVIN + 0.3V
Storage Temperature −65°C to 150°C
Soldering Specification for HTSSOP Pb-Free Infrared or Convection 260°C
(30 sec)
ESD Rating
Human Body Model
(5)
2kV
(1) Absolute Maximum Ratings indicate limits beyond witch damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) The PVIN pin can tolerate transient voltages up to 6.5 V for a period of up to 6ns. These transients can occur during the normal
operation of the device.
(4) The SW pin can tolerate transient voltages up to 9.0 V for a period of up to 6ns, and -1.0V for a duration of 4ns. These transients can
occur during the normal operation of the device.
(5) The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor to each pin.
OPERATING RATINGS
(1)
PVIN, AVIN to GND +2.95V to +5.5V
Junction Temperature −40°C to +125°C
θ
JA
(2)
24°C/W
(1) Absolute Maximum Ratings indicate limits beyond witch damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics.
(2) Thermal measurements were performed on a 2x2 inch, 4 layer, 2 oz. copper outer layer, 1 oz.copper inner layer board with twelve 8 mil.
vias underneath the EP of the device and an additional sixteen 8 mil. vias under the unexposed package.
ELECTRICAL CHARACTERISTICS
Unless otherwise stated, the following conditions apply: V
PVIN, AVIN
= 5V. Limits in standard type are for T
J
= 25°C only, limits
in bold face type apply over the junction temperature (T
J
) range of −40°C to +125°C. Minimum and maximum limits are
specified through test, design, or statistical correlation. Typical values represent the most likely parametric norm at T
J
= 25°C,
and are provided for reference purposes only.
Symbol Parameter Conditions Min Typ Max Units
SYSTEM
V
FB
Feedback pin voltage V
IN
= 2.95V to 5.5V -1% 0.6 1% V
ΔV
OUT
/ΔI
OUT
Load Regulation 0.02 %V
OUT
/
A
ΔV
OUT
/ΔV
IN
Line Regulation 0.1 %V
OUT
/
V
R
DSON HS
High Side Switch On Resistance I
SW
= 12A 7.0 9.0 mΩ
R
DSON LS
Low Side Switch On Resistance I
SW
= 12A 4.3 6.0 mΩ
I
CLR
HS Rising Switch Current Limit 17.3 20 22.8 A
I
CLF
LS Falling Switch Current Limit 14 A
V
ZX
Zero Cross Voltage -8 3 12 mV
I
Q
Operating Quiescent Current 1.5 3.0 mA
I
SD
Shutdown Quiescent Current V
EN
= 0V 50 70 µA
V
UVLO
AVIN Under Voltage Lockout AVIN Rising 2.45 2.70 2.95 V
V
UVLOHYS
AVIN Under Voltage Lockout Hysteresis 140 200 280 mV
V
TRACKOS
SS/TRACK PIN accuracy (V
SS
- V
FB
) 0 < V
TRACK
< 0.55V -10 6 20 mV
I
SS
Soft-Start Pin Source Current 1.3 1.9 2.5 µA
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