Datasheet

LM20242
www.ti.com SNVS534E –OCTOBER 2007–REVISED MARCH 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1)
VIN to GND -0.3V to +38V
BOOT to GND -0.3V to +43V
BOOT to SW -0.3V to +7V
SW to GND -0.5V to +38V
SW to GND (Transient) -1.5V (< 20 ns)
FB, EN, SS/TRK, PGOOD to GND -0.3V to +6V
VCC to GND -0.3V to +8V
Storage Temperature -65°C to 150°C
ESD Rating
Human Body Model
(2)
2kV
(1) Absolute Maximum Ratings indicate limits beyond witch damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test
conditions, see the Electrical Characteristics.
(2) The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor to each pin.
OPERATING RATINGS
VIN to GND +4.5V to +36V
Junction Temperature −40°C to + 125°C
ELECTRICAL CHARACTERISTICS
Unless otherwise stated, the following conditions apply: V
VIN
= 12V. Limits in standard type are for T
J
= 25°C only, limits in
bold face type apply over the junction temperature (T
J
) range of -40°C to +125°C. Minimum and Maximum limits are
specified through test, design, or statistical correlation. Typical values represent the most likely parametric norm at T
J
= 25°C,
and are provided for reference purposes only.
Symbol Parameter Conditions Min Typ Max Units
V
FB
Feedback pin voltage V
VIN
= 4.5V to 36V 0.788 0.8 0.812 V
V
COMP
= 500 mV to 700 mV
R
HSW-DS(ON)
High-Side MOSFET On-Resistance I
SW
= 200 mA 130 225 mΩ
R
LSW-DS(ON)
Low-Side MOSFET On-Resistance I
SW
= 200 mA 110 190 mΩ
I
Q
Operating Quiescent Current V
VIN
= 4.5V to 36V 2 3 mA
I
SD
Shutdown Quiescent current V
EN
= 0V 150 180 µA
V
UVLO
VIN Under Voltage Lockout Rising V
VIN
3.65 3.9 4.2 V
V
UVLO(HYS)
VIN Under Voltage Lockout Hysteresis 200 400 mV
V
VCC
VCC Voltage I
VCC
= -5 mA, V
EN
= 5V 5.5 V
I
SS
Soft-Start Pin Source Current V
SS
= 0V 3 5 7 µA
I
BOOT
BOOT Diode Leakage V
BOOT
= 4V 10 nA
V
F-BOOT
BOOT Diode Forward Voltage I
BOOT
= -100 mA 0.9 1.1 V
Powergood
V
FB(OVP)
Over Voltage Protection Rising Threshold V
FB(OVP)
/ V
FB
107 110 112 %
V
FB(OVP-HYS)
Over Voltage Protection Hysteresis Δ
VFB(OVP)
/ V
FB
2 3 %
V
FB(PG)
PGOOD Rising Threshold V
FB(PG)
/ V
FB
93 95 97 %
V
FB(PG-HYS)
PGOOD Hysteresis Δ
VFB(PG)
/ V
FB
2 3 %
T
PGOOD
PGOOD delay 20 µs
I
PGOOD(SNK)
PGOOD Low Sink Current V
PGOOD
= 0.5V 0.6 1 mA
I
PGOOD(SRC)
PGOOD High Leakage Current V
PGOOD
= 5V 5 200 nA
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