Datasheet

LM13700
SNOSBW2E –NOVEMBER 1999–REVISED MARCH 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
Supply Voltage
LM13700 36 V
DC
or ±18V
Power Dissipation
(2)
T
A
= 25°C
LM13700N 570 mW
Differential Input Voltage ±5V
Diode Bias Current (I
D
) 2 mA
Amplifier Bias Current (I
ABC
) 2 mA
Output Short Circuit Duration Continuous
Buffer Output Current
(3)
20 mA
Operating Temperature Range
LM13700N 0°C to +70°C
DC Input Voltage +V
S
to −V
S
Storage Temperature Range −65°C to +150°C
Soldering Information
PDIP Package
Soldering (10 sec.) 260°C
SOIC Package
Vapor Phase (60 sec.) 215°C
Infrared (15 sec.) 220°C
(1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits.
(2) For operation at ambient temperatures above 25°C, the device must be derated based on a 150°C maximum junction temperature and a
thermal resistance, junction to ambient, as follows: LM13700N, 90°C/W; LM13700M, 110°C/W.
(3) Buffer output current should be limited so as to not exceed package dissipation.
2 Submit Documentation Feedback Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM13700