Datasheet

LM12L458
www.ti.com SNAS085B –JULY 1999–REVISED MARCH 2013
Absolute Maximum Ratings
(1)(2)
Supply Voltage (V
A
+ and V
D
+) 6.0V
Voltage at Input and Output Pins, except analog inputs −0.3V to (V
+
+ 0.3V)
Voltage at Analog Inputs − 5V to (V
+
+ 5V)
|(V
A
+) − (V
D
+)| 300 mV
Input Current at Any Pin
(3)
±5 mA
Package Input Current
(3)
±20 mA
Power Consumption (T
A
= 25°C)
(4)
875 mW
Storage Temperature −65°C to +150°C
Lead Temperature, Infrared, 15 sec. +300°C
ESD Susceptibility
(5)
1.5 kV
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the
Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
(2) All voltages are measured with respect to GND, unless otherwise specified.
(3) When the input voltage (V
IN
) at any pin exceeds the power supply rails (V
IN
< GND or V
IN
> (V
A
+ or V
D
+)), the current at that pin should
be limited to 5 mA. The 20 mA maximum package input current rating allows the voltage at any four pins, with an input current of 5 mA,
to simultaneously exceed the power supply voltages.
(4) The maximum power dissipation must be derated at elevated temperatures and is dictated by T
Jmax
(maximum junction temperature),
?
JA
(package junction to ambient thermal resistance), and T
A
(ambient temperature). The maximum allowable power dissipation at any
temperature is PD
max
= (T
Jmax
- T
A
)/?
JA
or the number given in the Absolute Maximum Ratings, whichever is lower.
(5) Human body model, 100 pF discharged through a 1.5 kO resistor.
Package Thermal Resistances
Package θ
JA
44-Lead PLCC 50°C / W
Operating Ratings
(1)(2)
Temperature Range −40°C ≤ T
A
≤ 85°C
Supply Voltage - V
A
+, V
D
+ +3.0V to +5.5V
|V
A
+ − V
D
+| ≤100 mV
V
IN+
Input Range GND ≤ V
IN+
≤ V
A
+
V
IN−
Input Range GND ≤ V
IN−
≤ V
A
+
V
REF+
Input Voltage 1V ≤ V
REF+
≤ V
A
+
V
REF−
Input Voltage 0V ≤ V
REF−
≤ V
REF+
− 1V
V
REF+
− V
REF−
1V ≤ V
REF
≤ V
A
+
V
REF
Common Mode Range
(3)
0.1 V
A
+
≤ V
REFCM
≤ 0.6 V
A
+
T
J
(MAX) 150°C
(1) All voltages are measured with respect to GND, unless otherwise specified.
(2) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the
Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
(3) V
REFCM
(Reference Voltage Common Mode Range) is defined as (V
REF+
+ V
REF-
)/2.
Table 1. Reliability Information - Transistor Count
Device Number
P-Chan MOS Transistor 12,232
N-Chan MOS Transistor 15,457
Parasitic Vertical Bipolar Junction Transistor 4
Parasitic Lateral Bipolar Junction Transistor 2
TOTAL Transistors 27,695
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