Datasheet

LM10010
www.ti.com SNVS717C –JULY 2011–REVISED MARCH 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
VDD, EN, IDAC_OUT -0.3V to 6V
VIDA, VIDB, VIDC, VIDS -0.3V to 6V
ESD Rating
(3)
Human Body Model 2 kV
Storage Temperature -65°C to +150°C
Junction Temperature +150°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and conditions,
see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3) The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin.
Operating Ratings
VDD 3.0V to 5.5V
IDAC_OUT -0.3V to VDD-1.75V
VIDA, VIDB, VIDC, VIDS -0.3V to 5.5V
EN -0.3V to 5.5V
Junction Temperature −40°C to +125°C
Ambient Temperature −40°C to +125°C
WSON-10 Thermal Resistance (θ
JA
)
(1)
40°C/W
(1) Junction to ambient thermal resistance is highly application and board layout dependent. Specified thermal resistance values for the
package specified is based on a 4-layer, 4"x3", 2/1/1/2 oz. Cu board as per JEDEC standards is used.
Electrical Characteristics
Limits in standard type are for T
J
= 25°C only. Limits appearing in boldface type apply over the full operating junction
temperature range (-40°C < T
J
< +125°C). Unless otherwise noted, specifications apply to the Typical Application Circuit. See
(1)
.
Symbol Parameter Conditions Min. Typ. Max. Units
Supply, UVLO, and Enable
I
Q
Quiescent current VDD=5.0V, V
EN
=2.0V 250 280 µA
VDD=5.0V, V
EN
=2.0V, I
FS
340 µA
VDD=5.0V, V
EN
=0.0V 45 70 µA
UVLO Under voltage rising threshold 2.65 2.95 V
Under voltage falling threshold 2.2 2.45 V
Hysteresis 100 200 300 mV
V
EN
Enable rising threshold 1.20 1.34 1.45 V
Enable hysteresis 50 100 180 mV
I
EN
Enable pullup current 2 µA
IDAC
ACC Accuracy Measured at full scale 2 -2 %
LSB DAC step size I
FS
/(2
6
-1) 940 nA
Default Output code At startup 46d Code
Output current At startup 16 µA
I
FS
Full-scale output current VID[5:0] = 000000b 59.2 µA
INL Integral non-linearity -1 0.15 1 LSB
(1) All limits are ensured. All electrical characteristics having room temperature limits are tested during production at T
A
= 25°C. All hot and
cold limits are specified by correlating the electrical characteristics to process and temperature variations and applying statistical process
control.
Copyright © 2011–2013, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: LM10010