Datasheet

TMS570LS1224
www.ti.com SPNS190B –OCTOBER 2012–REVISED FEBRUARY 2015
6.10.5 Program Flash
Table 6-23. Timing Requirements for Program Flash
Parameter MIN NOM MAX Unit
t
prog(144bit)
Wide Word (144bit) programming time 40 300 µs
t
prog(Total)
1.25MByte programming time
(1)
-40°C to 125°C 13 s
0°C to 60°C, for first 3.3 6.6 s
25 cycles
t
erase(bank0)
Sector/Bank erase time
(2)
-40°C to 125°C 0.03 4 s
0°C to 60°C, for first 16 100 ms
25 cycles
t
wec
Write/erase cycles with 15 year Data Retention -40°C to 125°C 1000 cycles
requirement
(1) This programming time includes overhead of state machine, but does not include data transfer time. The programming time assumes
programming 144 bits at a time at the maximum specified operating frequency.
(2) During bank erase, the selected sectors are erased simultaneously. The time to erase the bank is specified as equal to the time to erase
a sector.
6.10.6 Data Flash
Table 6-24. Timing Requirements for Data Flash
Parameter MIN NOM MAX Unit
t
prog(144bit)
Wide Word (144bit) programming time 40 300 µs
t
prog(Total)
EEPROM Emulation (bank 7) 64KByte -40°C to 125°C 660 ms
programming time
(1)
0°C to 60°C, for first 165 330 ms
25 cycles
t
erase(bank7)
EEPROM Emulation (bank 7) Sector/Bank -40°C to 125°C 0.2 8 s
erase time
(2)
0°C to 60°C, for first 14 100 ms
25 cycles
t
wec
Write/erase cycles with 15 year Data Retention -40°C to 125°C 100000 cycles
requirement
(1) This programming time includes overhead of state machine, but does not include data transfer time. The programming time assumes
programming 144 bits at a time at the maximum specified operating frequency.
(2) During bank erase, the selected sectors are erased simultaneously. The time to erase the bank is specified as equal to the time to erase
a sector.
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