Datasheet
Table Of Contents
- 1 Device Overview
- Table of Contents
- 2 Revision History
- 3 Device Comparison
- 4 Terminal Configuration and Functions
- 4.1 PGE QFP Package Pinout (144-Pin)
- 4.2 ZWT BGA Package Ball-Map (337 Ball Grid Array)
- 4.3 Terminal Functions
- 4.3.1 PGE Package
- 4.3.1.1 Multibuffered Analog-to-Digital Converters (MibADC)
- 4.3.1.2 Enhanced High-End Timer Modules (N2HET)
- 4.3.1.3 Enhanced Capture Modules (eCAP)
- 4.3.1.4 Enhanced Quadrature Encoder Pulse Modules (eQEP)
- 4.3.1.5 Enhanced Pulse-Width Modulator Modules (ePWM)
- 4.3.1.6 General-Purpose Input / Output (GPIO)
- 4.3.1.7 Controller Area Network Controllers (DCAN)
- 4.3.1.8 Local Interconnect Network Interface Module (LIN)
- 4.3.1.9 Standard Serial Communication Interface (SCI)
- 4.3.1.10 Inter-Integrated Circuit Interface Module (I2C)
- 4.3.1.11 Standard Serial Peripheral Interface (SPI)
- 4.3.1.12 Multibuffered Serial Peripheral Interface Modules (MibSPI)
- 4.3.1.13 Ethernet Controller
- 4.3.1.14 USB Host and Device Port Controller Interface
- 4.3.1.15 System Module Interface
- 4.3.1.16 Clock Inputs and Outputs
- 4.3.1.17 Test and Debug Modules Interface
- 4.3.1.18 Flash Supply and Test Pads
- 4.3.1.19 Supply for Core Logic: 1.2V nominal
- 4.3.1.20 Supply for I/O Cells: 3.3V nominal
- 4.3.1.21 Ground Reference for All Supplies Except VCCAD
- 4.3.2 ZWT Package
- 4.3.2.1 Multibuffered Analog-to-Digital Converters (MibADC)
- 4.3.2.2 Enhanced High-End Timer Modules (N2HET)
- 4.3.2.3 Enhanced Capture Modules (eCAP)
- 4.3.2.4 Enhanced Quadrature Encoder Pulse Modules (eQEP)
- 4.3.2.5 Enhanced Pulse-Width Modulator Modules (ePWM)
- 4.3.2.6 General-Purpose Input / Output (GPIO)
- 4.3.2.7 Controller Area Network Controllers (DCAN)
- 4.3.2.8 Local Interconnect Network Interface Module (LIN)
- 4.3.2.9 Standard Serial Communication Interface (SCI)
- 4.3.2.10 Inter-Integrated Circuit Interface Module (I2C)
- 4.3.2.11 Standard Serial Peripheral Interface (SPI)
- 4.3.2.12 Multibuffered Serial Peripheral Interface Modules (MibSPI)
- 4.3.2.13 Ethernet Controller
- 4.3.2.14 USB Host and Device Port Controller Interface
- 4.3.2.15 External Memory Interface (EMIF)
- 4.3.2.16 System Module Interface
- 4.3.2.17 Clock Inputs and Outputs
- 4.3.2.18 Test and Debug Modules Interface
- 4.3.2.19 Flash Supply and Test Pads
- 4.3.2.20 Reserved
- 4.3.2.21 No Connects
- 4.3.2.22 Supply for Core Logic: 1.2V nominal
- 4.3.2.23 Supply for I/O Cells: 3.3V nominal
- 4.3.2.24 Ground Reference for All Supplies Except VCCAD
- 4.3.1 PGE Package
- 5 Specifications
- 5.1 Absolute Maximum Ratings Over Operating Free-Air Temperature Range
- 5.2 ESD Ratings
- 5.3 Power-On Hours (POH)
- 5.4 Device Recommended Operating Conditions
- 5.5 Switching Characteristics Over Recommended Operating Conditions for Clock Domains
- 5.6 Wait States Required
- 5.7 Power Consumption Over Recommended Operating Conditions
- 5.8 Input/Output Electrical Characteristics Over Recommended Operating Conditions
- 5.9 Thermal Resistance Characteristics
- 5.10 Output Buffer Drive Strengths
- 5.11 Input Timings
- 5.12 Output Timings
- 5.13 Low-EMI Output Buffers
- 6 System Information and Electrical Specifications
- 6.1 Device Power Domains
- 6.2 Voltage Monitor Characteristics
- 6.3 Power Sequencing and Power On Reset
- 6.4 Warm Reset (nRST)
- 6.5 ARM Cortex-R4F CPU Information
- 6.6 Clocks
- 6.7 Clock Monitoring
- 6.8 Glitch Filters
- 6.9 Device Memory Map
- 6.10 Flash Memory
- 6.11 Tightly Coupled RAM Interface Module
- 6.12 Parity Protection for Accesses to Peripheral RAMs
- 6.13 On-Chip SRAM Initialization and Testing
- 6.14 External Memory Interface (EMIF)
- 6.15 Vectored Interrupt Manager
- 6.16 DMA Controller
- 6.17 Real Time Interrupt Module
- 6.18 Error Signaling Module
- 6.19 Reset / Abort / Error Sources
- 6.20 Digital Windowed Watchdog
- 6.21 Debug Subsystem
- 7 Peripheral Information and Electrical Specifications
- 7.1 Enhanced Translator PWM Modules (ePWM)
- 7.1.1 ePWM Clocking and Reset
- 7.1.2 Synchronization of ePWMx Time Base Counters
- 7.1.3 Synchronizing all ePWM Modules to the N2HET1 Module Time Base
- 7.1.4 Phase-Locking the Time-Base Clocks of Multiple ePWM Modules
- 7.1.5 ePWM Synchronization with External Devices
- 7.1.6 ePWM Trip Zones
- 7.1.7 Triggering of ADC Start of Conversion Using ePWMx SOCA and SOCB Outputs
- 7.1.8 Enhanced Translator-Pulse Width Modulator (ePWMx) Timings
- 7.2 Enhanced Capture Modules (eCAP)
- 7.3 Enhanced Quadrature Encoder (eQEP)
- 7.4 Multibuffered 12bit Analog-to-Digital Converter
- 7.5 General-Purpose Input/Output
- 7.6 Enhanced High-End Timer (N2HET)
- 7.7 Controller Area Network (DCAN)
- 7.8 Local Interconnect Network Interface (LIN)
- 7.9 Serial Communication Interface (SCI)
- 7.10 Inter-Integrated Circuit (I2C)
- 7.11 Multibuffered / Standard Serial Peripheral Interface
- 7.12 Ethernet Media Access Controller
- 7.13 Universal Serial Bus (USB) Host and Device Controllers
- 7.1 Enhanced Translator PWM Modules (ePWM)
- 8 Device and Documentation Support
- 9 Mechanical Packaging and Orderable Information
- Important Notice
- 1518515_DS2.pdf
RM46L852
SPNS185C –SEPTEMBER 2012 –REVISED JUNE 2015
www.ti.com
5 Specifications
5.1 Absolute Maximum Ratings Over Operating Free-Air Temperature Range
(1)
MIN MAX UNIT
V
CC
(2)
-0.3 1.43 V
Supply voltage range: V
CCIO
, V
CCP
(2)
-0.3 4.6 V
V
CCAD
-0.3 6.25 V
All input pins, with exception of ADC pins -0.3 4.6 V
Input voltage range:
ADC input pins -0.3 6.25 V
I
IK
(V
I
< 0 or V
I
> V
CCIO
)
-20 +20 mA
All pins, except AD1IN[23:0] or AD2IN[15:0]
Input clamp current: I
IK
(V
I
< 0 or V
I
> V
CCAD
)
-10 +10 mA
AD1IN[23:0] or AD2IN[15:0]
Total -40 +40 mA
Operating free-air temperature range, T
A
: -40 105 °C
Operating junction temperature range, T
J
: -40 130 °C
Storage temperature range, T
stg
-65 150 °C
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to their associated
grounds.
5.2 ESD Ratings
VALUE UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS001
(1)
±2 kV
V
ESD
Electrostatic discharge (ESD) performance:
Charged device model (CDM), per JESD22-C101
(2)
All pins ±250 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
5.3 Power-On Hours (POH)
(1)(2)
JUNCTION
NOMINAL CORE VOLTAGE (V
CC
) LIFETIME POH
TEMPERATURE (Tj)
1.2 105ºC 100K
(1) This information is provided solely for your convenience and does not extend or modify the warranty provided under TI's standard terms
and conditions for TI semiconductor products.
(2) To avoid significant degradation, the device power-on hours (POH) must be limited to those specified in this table. To convert to
equivalent POH for a specific temperature profile, see the Calculating Equivalent Power-on-Hours for Hercules Safety MCUs Application
Report (SPNA207).
52 Specifications Copyright © 2012–2015, Texas Instruments Incorporated
Submit Documentation Feedback
Product Folder Links: RM46L852