Datasheet

TMS570LS0432
TMS570LS0332
www.ti.com SPNS186A –OCTOBER 2012–REVISED SEPTEMBER 2013
4.10 Flash Program and Erase Timings for Program Flash
Table 4-20. Timing Specifications for Program Flash
Parameter MIN NOM MAX Unit
t
prog
(144bit) Wide Word (144bit) programming time 40 300 µs
t
prog
(Total) 384KByte programming time
(1)
-40°C to 125°C 4 s
0°C to 60°C, for first 1 2 s
25 cycles
t
erase
Sector/Bank erase time
(2)
-40°C to 125°C 0.30 4 s
0°C to 60°C, for first 16 100 ms
25 cycles
t
wec
Write/erase cycles with 15 year Data Retention -40°C to 125°C 1000 cycles
requirement
(1) This programming time includes overhead of state machine, but does not include data transfer time. The programming time assumes
programming 144 bits at a time at the maximum specified operating frequency.
(2) During bank erase, the selected sectors are erased simultaneously. The time to erase the bank is specified as equal to the time to erase
a sector.
4.11 Flash Program and Erase Timings for Data Flash
Table 4-21. Timing Specifications for Data Flash
Parameter MIN NOM MAX Unit
t
prog
(72 bit) Wide Word (72bit) programming time 40 300 µs
t
prog
(Total) 16KByte programming time
(1)
-40°C to 125°C 330 ms
0°C to 60°C, for first 85 165 ms
25 cycles
t
erase
Sector/Bank erase time
(2)
-40°C to 125°C 0.200 8 s
0°C to 60°C, for first 14 100 ms
25 cycles
t
wec
Write/erase cycles with 15 year Data Retention -40°C to 125°C 100000 cycles
requirement
(1) This programming time includes overhead of state machine, but does not include data transfer time. The programming time assumes
programming 144 bits at a time at the maximum specified operating frequency.
(2) During bank erase, the selected sectors are erased simultaneously. The time to erase the bank is specified as equal to the time to erase
a sector.
Copyright © 2012–2013, Texas Instruments Incorporated System Information and Electrical Specifications 49
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