Datasheet

RF_P
C14
12 pF
C8
10 Fµ
C10
DNM
C16
100 nF
C5
10 Fµ
VDDS Decoupling Capacitors
VDDS
Pin 11 Pin 27
Pin 19
Y1
32.768 kHz
C18
12 pF
C17
12 pF
C3
100 nF
C4
100 nF
C6
100 nF
C12
1.2 pF
VDDS
R1
100 k
VDDR
Place L1 and
C8 close to pin 18
C20
100 nF
nRESET
DIO_8
DIO_0
DIO_7
DIO_9
Pin 28 Pin 32
C9
100 nF
VDDR Decoupling Capacitors
VDDR
Y2
24 MHz
1
2
4
3
C2
DNM
VDDS
L21
15 nH
1 2
L1
10 Hµ
1
2
DCDC_SW
C19
1 µF
50-Ω
Antenna
FL1
BLM18HE152SN1
1
2
RF_N used for RX biasing.
L21 may be removed at the
cost of 1 dB degraded
sensitivity
VDD_EB
C13
1.2 pF
L12
2 nH
1 2
CC26XX_4X4
U1
DIO_0
8
DIO_1
9
DIO_2
10
DIO_3
15
DIO_4
16
DIO_5
22
DIO_6
23
DIO_7
24
DIO_8
25
DIO_9
26
RESET_N
21
JTAG_TCKC
14
JTAG_TMSC
13
X24M_P
31
X24M_N
30
DCOUPL
12
VSS
29
VSS
3
EGP
33
VDDS
27
VDDS2
11
VDDS_DCDC
19
VDDR
28
VDDR
32
DCDC_SW
18
RX/TX
4
RF_N
RF_P
1
X32K_Q2
6
X32K_Q1
5
VSS
7
VSS
17
VSS
20
DIO_1
DIO_3/JTAG_TDO
DIO_2
DIO_6
DIO_5
DIO_4/JTAG_TDI
DCDC_SW
JTAG_TCK
nRESET
JTAG_TMS
C23
DNM
C22
DNM
X24M_N
X24M_P
2
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Copyright © 2015–2016, Texas Instruments Incorporated Application, Implementation, and Layout
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CC2650
www.ti.com SWRS158B –FEBRUARY 2015–REVISED JULY 2016
7.3 4 × 4 External Single-ended (4XS) Application Circuit
Figure 7-5. 4 × 4 External Single-ended (4XS) Application Circuit