Datasheet

SSIClk
SSIFss
SSITx
SSIRx
MSB LSB
S2
S3
S1
4 to 16 bits
26
CC1310
SWRS181C –SEPTEMBER 2015–REVISED OCTOBER 2016 www.ti.com
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Specifications Copyright © 2015–2016, Texas Instruments Incorporated
5.19.4 Flash Memory Characteristics
(1) This number is dependent on flash aging and increases over time and erase cycles.
T
c
= 25°C, V
DDS
= 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Supported flash erase cycles before failure 100 k Cycles
Flash page or sector erase current Average delta current 12.6 mA
Flash page or sector erase time
(1)
8 ms
Flash page or sector size 4 KB
Flash write current Average delta current, 4 bytes at a time 8.15 mA
Flash write time
(1)
4 bytes at a time 8 µs
5.19.5 Synchronous Serial Interface (SSI) Characteristics
(1) See the SSI timing diagrams, Figure 5-1, Figure 5-2, and Figure 5-3.
T
c
= 25°C, V
DDS
= 3.0 V, unless otherwise noted.
PARAMETER
NO.
PARAMETER MIN TYP MAX UNIT
S1 t
clk_per
SSIClk cycle time 12 65024 system clocks
S2
(1)
t
clk_high
SSIClk high time 0.5 × t
clk_per
S3
(1)
t
clk_low
SSIClk low time 0.5 × t
clk_per
Figure 5-1. SSI Timing for TI Frame Format (FRF = 01), Single Transfer Timing Measurement