Datasheet
24
CC1310
SWRS181C –SEPTEMBER 2015–REVISED OCTOBER 2016
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Specifications Copyright © 2015–2016, Texas Instruments Incorporated
DC Characteristics (continued)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
(1) Each GPIO is referenced to a specific VDDS pin. See the technical reference manual listed in Section 8.3 for more details.
T
A
= 25°C, V
DDS
= 3.8 V
GPIO pullup current Input mode, pullup enabled, Vpad = 0 V 277 µA
GPIO pulldown current Input mode, pulldown enabled, Vpad = VDDS 113 µA
GPIO high/low input transition, no hysteresis
IH = 0, transition between reading 0 and reading
1
1.67 V
GPIO low-to-high input transition, with hysteresis IH = 1, transition voltage for input read as 0 → 1 1.94 V
GPIO high-to-low input transition, with hysteresis IH = 1, transition voltage for input read as 1 → 0 1.54 V
GPIO input hysteresis
IH = 1, difference between 0 → 1 and 1 → 0
voltage transition points
0.4 V
VIH
Lowest GPIO input voltage reliably interpreted as
a High
0.8 VDDS
(1)
VIL
Highest GPIO input voltage reliably interpreted
as a Low
0.2 VDDS
(1)
(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
(2) °C/W = degrees Celsius per watt.
5.18 Thermal Characteristics
THERMAL METRIC
(1)
CC1310
UNIT
(2)
RSM
(VQFN)
RHB
(VQFN)
RGZ
(VQFN)
32 PINS 32 PINS 48 PINS
R
θJA
Junction-to-ambient thermal resistance 36.9 32.8 29.6 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 30.3 24.0 15.7 °C/W
R
θJB
Junction-to-board thermal resistance 7.6 6.8 6.2 °C/W
ψ
JT
Junction-to-top characterization parameter 0.4 0.3 0.3 °C/W
ψ
JB
Junction-to-board characterization parameter 7.4 6.8 6.2 ° C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance 2.1 1.9 1.9 °C/W
5.19 Timing and Switching Characteristics
5.19.1 Reset Timing
MIN TYP MAX UNIT
RESET_N low duration 1 µs
5.19.2 Switching Characteristics: Wakeup and Timing
Measured on the Texas Instruments CC1310EM-7XD-7793 reference design with T
c
= 25°C, V
DDS
= 3.0 V, unless otherwise
noted. The times listed here do not include RTOS overhead.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
MCU, Idle → Active 14 µs
MCU, Standby → Active 174 µs
MCU, Shutdown → Active 1097 µs