Datasheet

100 pF
16
15
14
12
13
11
10
9
10 W
4.5 W
2.5 W
MJD44H11
or
D44VH10
MJD45H11
or
D45VH10
15 V
15 V
DESAT
V
E
V
EE-L
V
CC2
V
C
V
OUT
V
EE-P
ISO5500
V
EE-L
ISO5500
SLLSE64C SEPTEMBER 2011REVISED JUNE 2013
www.ti.com
HIGHER OUTPUT CURRENT USING AN EXTERNAL CURRENT BUFFER
To increase the IGBT gate drive current, a non-inverting current buffer (such as the npn/pnp buffer shown in
Figure 72) may be used. Inverting types are not compatible with the desaturation fault protection circuitry and
must be avoided. The MJD44H11/MJD45H11 pair is appropriate for currents up to 8 A, the D44VH10/ D45VH10
pair for up to 15 A maximum.
Figure 72. Current Buffer for Increased Drive Current
Spacer
34 Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated
Product Folder Links :ISO5500