Datasheet

2ISO120/121
SPECIFICATIONS
ELECTRICAL
At T
A
= +25°C: V
S1
= V
S2
= ±15V: and R
L
= 2kΩ, unless otherwise noted.
*Specifications same as ISO120BG, ISO121BG.
NOTE: (1) Input voltage range = ±10V for V
S1
, V
S2
= ±4.5VDC to ±18VDC. (2) Ripple frequency is at carrier frequency. (3) Overload recovery is approximately three times
the settling time for other values of C
2
. (4) The SG-grade is specified –55°C to +125°C; performance of the SG in the –25°C to +85°C temperature range is the same
as the BG-grade.
ISO120BG, ISO121BG ISO120G, ISO120SG
(4)
, ISO121G
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
ISOLATION
Voltage Rated Continuous ISO120: AC 60Hz T
MIN
to T
MAX
1500 * Vrms
DC T
MIN
to T
MAX
2121 * VDC
ISO121: AC 60Hz T
MIN
to T
MAX
3500 * Vrms
DC T
MIN
to T
MAX
4950 * VDC
100% Test (AC 60Hz): ISO120 1s; Partial Discharge ≤ 5pC 2500 * Vrms
ISO121 1s; Partial Discharge ≤ 5pC 5600 * Vrms
Isolation Mode Rejection ISO 120: AC 60Hz 1500Vrms 115 * dB
DC 160 * dB
ISO121: AC60Hz 3500Vrms 115 * dB
DC 160 * dB
Barrier Impedance 10
14
|| 2 * Ω || pF
Leakage Current V
ISO
= 240Vrms, 60Hz 0.18 0.5 * * µArms
GAIN
(4)
V
O
= ±10V
Nominal Gain C
1
= C
2
= 1000pF 1 1 V/V
Gain Error ±0.04 ±0.1 ±0.05 ±0.25 %FSR
Gain vs Temperature ±5 ±20 ±10 ±40 ppm/°C
Nonlinearity ±0.005 ±0.01 ±0.01 ±0.05 %FSR
Nominal Gain C
1
= C
2
= 0 1 1 V/V
Gain Error ±0.04 ±0.25 ±0.05 ±0.25 %FSR
Gain vs Temperature ±40 ±40 ppm/°C
Nonlinearity ±0.02 ±0.1 ±0.04 ±0.1 %FSR
INPUT OFFSET VOLTAGE
(4)
Initial Offset C
1
= C
2
= 1000pF ±5 ±25 ±10 ±50 mV
vs Temperature ±100 ±150 ±150 ±400 µV/°C
Initial Offset C
1
= C
2
= 0 ±25 ±100 ±40 ±100 mV
vs Temperature ±250 ±500 µV/°C
Initial Offset
vs Supply ±V
S1
or ±V
S2
= ±4.5V to ±18V ±2 ±2 mV/V
Noise 44µV/√Hz
INPUT
Voltage Range
(1)
±10 ±15 * * V
Resistance 200 * kΩ
OUTPUT
Voltage Range ±10 ±12.5 * * V
Current Drive ±5 ±15 * * mA
Capacitive Load Drive 0.1 * µF
Ripple Voltage
(2)
10 * mVp-p
FREQUENCY RESPONSE
Small Signal Bandwith C
1
= C
2
= 0 60 * kHz
C
1
= C
2
= 1000pF 6 * kHz
Slew Rate 2*V/µs
Settling Time V
O
= ±10V
0.1% C
2
= 100pF 50 * µs
0.01% C
1
= C
2
= 1000pF 350 * µs
Overload Recovery Time
(3)
50% Output Overload, 150 * µs
C
1
= C
2
= 0
POWER SUPPLIES
Rated Voltage 15 * V
Voltage Range ±4.5 ±18 * * V
Quiescent Current: V
S1
±4.0 ±5.5 * * mA
V
S2
±5.0 ±6.5 * * mA
TEMPERATURE RANGE
Specification: BG and G –25 85 –25 85 °C
SG
(4)
–25 85 –55 125 °C
Operating –55 125 –55 125 °C
Storage –65 150 –55 150 °C
θ
JA
: ISO120 40 40 °C/W
ISO121 25 25 °C/W