Datasheet

INA826
www.ti.com SBOS562E –AUGUST 2011–REVISED APRIL 2013
ELECTRICAL CHARACTERISTICS (continued)
At T
A
= +25°C, V
S
= ±15 V, R
L
= 10 kΩ, V
REF
= 0 V, and G = 1, unless otherwise noted.
INA826
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
REFERENCE INPUT
R
IN
Input impedance 100 kΩ
Voltage range (V–) (V+) V
Gain to output 1 V/V
Reference gain error 0.01 %
POWER SUPPLY
Single +2.7 +36 V
V
S
Power-supply voltage
Dual ±1.35 ±18 V
V
IN
= 0 V 200 250 µA
I
Q
Quiescent current
vs temperature, T
A
= –40°C to +125°C 250 300 µA
TEMPERATURE RANGE
Specified –40 +125 °C
Operating –50 +150 °C
THERMAL INFORMATION
INA826 INA826 INA826
THERMAL METRIC
(1)
D (SOIC) DGK (MSOP) DRG (DFN) UNITS
8 PINS 8 PINS 8 PINS
θ
JA
Junction-to-ambient thermal resistance 141.4 215.4 50.9
θ
JCtop
Junction-to-case (top) thermal resistance 75.4 66.3 60.0
θ
JB
Junction-to-board thermal resistance 59.6 97.8 25.4
°C/W
ψ
JT
Junction-to-top characterization parameter 27.4 10.5 1.2
ψ
JB
Junction-to-board characterization parameter 59.1 96.1 25.5
θ
JCbot
Junction-to-case (bottom) thermal resistance N/A N/A 7.2
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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