Datasheet

1+
49.4kW
R
G
INA826
SBOS562E –AUGUST 2011–REVISED APRIL 2013 www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
At T
A
= +25°C, V
S
= ±15 V, R
L
= 10 kΩ, V
REF
= 0 V, and G = 1, unless otherwise noted.
INA826
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
GAIN
G Gain equation V/V
G Range of gain 1 1000 V/V
G = 1, V
O
= ±10 V ±0.003 ±0.015 %
G = 10, V
O
= ±10 V ±0.03 ±0.15 %
GE Gain error
G = 100, V
O
= ±10 V ±0.04 ±0.15 %
G = 1000, V
O
= ±10 V ±0.04 ±0.15 %
G = 1, T
A
= –40°C to +125°C ±0.1 ±1 ppm/°C
Gain vs temperature
(4)
G > 1, T
A
= –40°C to +125°C ±10 ±35 ppm/°C
G = 1 to 100, V
O
= –10 V to +10 V 1 5 ppm
Gain nonlinearity
G = 1000, V
O
= –10 V to +10 V 5 20 ppm
OUTPUT
Voltage swing R
L
= 10 kΩ (V–) + 0.1 (V+) – 0.15 V
Load capacitance stability 1000 pF
Open loop output impedance See Figure 56
Short-circuit current Continuous to V
S
/2 ±16 mA
FREQUENCY RESPONSE
G = 1 1 MHz
G = 10 500 kHz
BW Bandwidth, –3 dB
G = 100 60 kHz
G = 1000 6 kHz
G = 1, V
O
= ±14.5 V 1 V/µs
SR Slew rate
G = 100, V
O
= ±14.5 V 1 V/µs
G = 1, V
STEP
= 10 V 12 µs
G = 10, V
STEP
= 10 V 12 µs
t
S
Settling time to 0.01%
G = 100, V
STEP
= 10 V 24 µs
G = 1000, V
STEP
= 10 V 224 µs
G = 1, V
STEP
= 10 V 14 µs
G = 10, V
STEP
= 10 V 14 µs
t
S
Settling time to 0.001%
G = 100, V
STEP
= 10 V 31 µs
G = 1000, V
STEP
= 10 V 278 µs
(4) The values specified for G > 1 do not include the effects of the external gain-setting resistor, R
G
.
4 Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated
Product Folder Links: INA826