Datasheet

INA326, INA327
14
SBOS222D
www.ti.com
FIGURE 10. Low-Side –48V Current Shunt Monitor.
INA326
R
L
I
L
5
4
2
1
8
3
6
7
R
I
= 2kΩ 0.1µF
OPA336PA
1nF
+5V
7
6
2
V
CC
GND
3
4
R
F
= 100kΩ
R
START
100kΩ
R
PULL- DOWN
200kΩ
V
O
= 2(I
L
× R
S
)
8.45kΩ
ZMM5231BDICT
5.1V
ZVN4525G
(zetex)
(High- Voltage
n- Channel
FET)
R
S
V
S
= 0mV
to 50mV max
−
+
−48V
NOTE: 0.2% accuracy. Current shunt
monitor circuit can be designed for −250V supply
with appropriate selection of high- voltage FET.
R
F
R
I
FIGURE 11. High-Side +48V Current Shunt Monitor.
INA326
Load
5
7
2
1
8
3
6
4
7
2
3
6
4
R
I
2kΩ
OPA336PA
1nF
0.1µF
49.9kΩ
75kΩ
165kΩ
V
O
= 0.1V to 4.9V
8.45kΩ
ZMM5231BDICT
5.1V
R
SHUNT
V
SHUNT
= 0mV
to 50mV
−
+
+48V
V
CC
GND
(High- Voltage
p- Channel FET)
ZVP4525
(zetex)
+5V
FIGURE 9. Low-Side Current Shunt Measurement.
INA326
+5V
R
L
R
S
I
L
R
O
100Ω
5
2
1
8
3
6
7
C
2
C
O
1µF
2kΩ
V
O
R
2
R
1
NOTE: Connection point of V− will include ( ) or
exclude ( ) quiescent current in the measurement
as desired. Output offset required for measurements
near zero (see Figure 6).
R
S
must be chosen so that
the input voltage does not
exceed 20mV beyond the rail.
V
O
= 2(I
L
× R
S
)
R
2
R
1