Datasheet

INA230

SBOS601 –FEBRUARY 2012

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PACKAGE INFORMATION

(1)

PRODUCT PACKAGE-LEAD PACKAGE DESIGNATOR PACKAGE MARKING

INA230 QFN-16 RGT I230

(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the

INA230 product folder at www.ti.com.

ABSOLUTE MAXIMUM RATINGS

(1)

Over operating free-air temperature range (unless otherwise noted).

INA230 UNIT

Supply voltage, V

6 V

Differential (V

IN+

) – (V

IN–

)

(2)

–30 to +30 V

Analog inputs, IN+, IN–

Common-mode –0.3 to +30 V

SDA GND – 0.3 to +6 V

SCL GND – 0.3 to V

+ 0.3 V

Input current into any pin 5 mA

Open-drain digital output current 10 mA

Storage temperature –65 to +150 °C

Junction temperature +150 °C

Human body model (HBM) 2500 V

ESD Ratings Charged-device model (CDM) 1000 V

Machine model (MM) 150 V

(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

(2) V

IN+

and V

IN–

may have a differential voltage of –30 V to +30 V; however, the voltage at these pins must not exceed the range –0.3 V to

+30 V.