Datasheet
OUT
IN+
IN-
-
+
REF
GND
V+
1MW
1MW
R3
R4
+2.7V to +26V
Reference
Voltage
Shunt
Load Supply
Output
0.01 F
to 0.1 F
m
m
MMZ1608B601C
0.01 F
to 0.1 F
m
m
Device
INA210
,
INA211
,
INA212
,
INA213
,
INA214
,
INA215
www.ti.com
SBOS437F –MAY 2008–REVISED JUNE 2014
8.4.5 Improving Transient Robustness
Applications involving large input transients with excessive dV/dt above 2 kV per microsecond present at the
device input pins may cause damage to the internal ESD structures on version A devices. This potential damage
is a result of the internal latching of the ESD structure to ground when this transient occurs at the input. With
significant current available in most current-sensing applications, the large current flowing through the input
transient-triggered, ground-shorted ESD structure quickly results in damage to the silicon. External filtering can
be used to attenuate the transient signal prior to reaching the inputs to avoid the latching condition. Care must be
taken to ensure that external series input resistance does not significantly impact gain error accuracy. For
accuracy purposes, these resistances should be kept under 10 Ω if possible. Ferrite beads are recommended for
this filter because of their inherently low dc ohmic value. Ferrite beads with less than 10 Ω of resistance at dc
and over 600 Ω of resistance at 100 MHz to 200 MHz are recommended. The recommended capacitor values for
this filter are between 0.01 µF and 0.1 µF to ensure adequate attenuation in the high-frequency region. This
protection scheme is shown in Figure 29.
Figure 29. Transient Protection
To minimize the cost of adding these external components to protect the device in applications where large
transient signals may be present, version B devices are now available with new ESD structures that are not
susceptible to this latching condition. Version B devices are incapable of sustaining these damage causing
latched conditions so they do not have the same sensitivity to the transients that the version A devices have,
thus making the version B devices a better fit for these applications.
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