Datasheet

INA163
SBOS177D
3
www.ti.com
INA163UA
PARAMETER CONDITIONS MIN TYP MAX UNITS
GAIN
Range 1 to 10000 V/V
Gain Equation
(1)
G = 1 + 6k/R
G
Gain Error, G = 1 ±0.1 ±0.25 %
G = 10 ±0.2 ±0.7 %
G = 100 ±0.2 %
G = 1000 ±0.5 %
Gain Temp Drift Coefficient, G = 1 ±1 ±10 ppm/°C
G > 10 ±25 ±100 ppm/°C
Nonlinearity, G = 1 ±0.0003 % of FS
G = 100 ±0.0006 % of FS
INPUT STAGE NOISE
Voltage Noise R
SOURCE
= 0
f
O
= 1kHz 1nV/Hz
f
O
= 100Hz 1.2 nV/Hz
f
O
= 10Hz 2nV/Hz
Current Noise
f
O
= 1kHz 0.8 pA/Hz
OUTPUT STAGE NOISE
Voltage Noise, f
O
= 1kHz 60 nV/Hz
INPUT OFFSET VOLTAGE
Input Offset Voltage V
CM
= V
OUT
= 0V 50 + 2000/G 250 + 5000/G µV
vs Temperature T
A
= T
MIN
to T
MAX
1 + 20/G µV/°C
vs Power Supply V
S
= ±4.5V to ±18V 1 + 50/G 3 + 200/G µV/V
INPUT VOLTAGE RANGE
Common-Mode Voltage Range V
IN+
V
IN
= 0V (V+) 4 (V+) 3V
V
IN+
V
IN
= 0V (V) + 4 (V) + 3 V
Common-Mode Rejection, G = 1 V
CM
= ±11V, R
SRC
= 0 70 80 dB
G = 100 100 116 dB
INPUT BIAS CURRENT
Initial Bias Current 212µA
vs Temperature 10 nA/°C
Initial Offset Current 0.1 1 µA
vs Temperature 0.5 nA/°C
INPUT IMPEDANCE
Differential 60 2M  pF
Common-Mode 60 2M  pF
DYNAMIC RESPONSE
Bandwidth, Small Signal, 3dB, G = 1 3.4
G = 100 800 kHz
Slew Rate 15 V/µs
THD+Noise, f = 1kHz G = 100 0.002 %
Settling Time, 0.1% G = 100, 10V Step 2 µs
0.01% G = 100, 10V Step 3.5 µs
Overload Recovery 50% Overdrive 1 µs
OUTPUT
Voltage R
L
= 2k to Gnd (V+) 2 (V+) 1.8 V
(V) + 2 (V) + 1.8 V
Load Capacitance Stability 1000 pF
Short-Circuit Current Continuous-to-Common ±60 mA
POWER SUPPLY
Rated Voltage ±15 V
Voltage Range ±4.5 ±18 V
Current, Quiescent I
O
= 0mA ±10 ±12 mA
TEMPERATURE RANGE
Specification 40 +85 °C
Operating 40 +125 °C
θ
JA
100 °C/W
NOTE: (1) Gain accuracy is a function of external R
G
.
ELECTRICAL CHARACTERISTICS: V
S
= ±15V
T
A
= +25°C and at rated supplies, V
S
= ±15V, R
L
= 2k connected to ground, unless otherwise noted.