Datasheet

INA149
www.ti.com SBOS579B –SEPTEMBER 2011–REVISED JULY 2012
ELECTRICAL CHARACTERISTICS: V+ = +15 V and V– = –15 V
At T
A
= +25°C, R
L
= 2 kΩ connected to ground, and V
CM
= REF
A
= REF
B
= GND, unless otherwise noted.
INA149
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
GAIN
Initial V
OUT
= ±10.0 V 1 V/V
Gain error V
OUT
= ±10.0 V ±0.005 ±0.02 %FSR
Gain vs temperature, T
A
= –40°C to +125°C ±1.5 ±10 ppm/°C
Nonlinearity ±0.0005 ±0.001 %FSR
OFFSET VOLTAGE
350 1100 µV
Initial offset vs temperature, T
A
= –40°C to +125°C 3 15 µV/°C
vs supply (PSRR), V
S
= ±2 V to ±18 V 90 120 dB
INPUT
Differential 800 kΩ
Impedance
Common-mode 200 kΩ
Differential –13.5 13.5 V
Voltage range
Common-mode –275 275 V
At dc, V
CM
= ±275 V 90 100 dB
vs temperature, T
A
= –40°C to +125°C, at dc 90 dB
Common-mode rejection
(CMRR)
At ac, 500 Hz, V
CM
= 500 V
PP
90 dB
At ac, 1 kHz, V
CM
= 500 V
PP
90 dB
OUTPUT
Voltage range –13.5 13.5 V
Short-circuit current ±25 mA
Capacitive load drive No sustained oscillations 10 nF
OUTPUT NOISE VOLTAGE
0.01 Hz to 10 Hz 20 µV
PP
10 kHz 550 nV/√Hz
DYNAMIC RESPONSE
Small-signal bandwidth 500 kHz
Slew rate V
OUT
= ±10-V step 1.7 5 V/µs
Full-power bandwidth V
OUT
= 20 V
PP
32 kHz
Settling time 0.01%, V
OUT
= 10-V step 7 µs
POWER SUPPLY
Voltage range ±2 ±18 V
V
S
= ±18 V, V
OUT
= 0 V 810 900 µA
Quiescent current
vs temperature, T
A
= –40°C to +125°C 1.1 mA
TEMPERATURE RANGE
Specified –40 +125 °C
Operating –55 +150 °C
Storage –65 +150 °C
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