Datasheet

INA149
SBOS579B –SEPTEMBER 2011–REVISED JULY 2012 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION
(1)
PRODUCT PACKAGE-LEAD PACKAGE DESIGNATOR PACKAGE MARKING
INA149 SOIC-8 D INA149A
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range, unless otherwise noted.
INA149 UNIT
Supply voltage (V+) – (V–) 40 V
Input voltage range Continuous 300 V
Common-mode and differential, 10 s 500 V
Maximum Voltage on REF
A
and REF
B
(V–) – 0.3 to (V+) + 0.3 V
Input current on any input pin
(2)
10 mA
Output short-circuit current duration Indefinite
Operating temperature range –55 to +150 °C
Storage temperature range –65 to +150 °C
Junction temperature +150 °C
Human body model (HBM) 1500 V
ESD rating Charged device model (CDM) 1000 V
Machine model (MM) 100 V
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2) REF
A
and REF
B
are diode clamped to the power-supply rails. Signals applied to these pins that can swing more than 0.3 V beyond the
supply rails should be limited to 10 mA or less.
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