Datasheet

INA129-EP
SBOS508 –DECEMBER 2009 www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
At T
A
= 25°C, V
S
= ±15 V, R
L
= 10 kΩ (unless otherwise noted)
Boldface limits apply over the specified temperature range, T
A
= –55°C to 125°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Gain vs temperature
(2)
G = 1 ±1 ±10 ppm/°C
49.4-kΩ resistance
(2) (3)
±25 ±100 ppm/°C
V
O
= ±13.6 V,
±0.0001 ±0.0018
G = 1
Over temperature ±0.0035
G = 10 ±0.0003 ±0.0035
Nonlinearity % of FSR
Over temperature ±0.0055
G = 100 ±0.0005 ±0.0035
Over temperature ±0.0055
G = 1000 ±0.001 See
(4)
OUTPUT
Positive R
L
= 10 kΩ (V+) − 1.4 (V+) − 0.9
Voltage V
Negative R
L
= 10 kΩ (V−) + 1.4 (V−) + 0.8
Load capacitance stability 1000 pF
Short-curcuit current +6/−15 mA
FREQUENCY RESPONSE
G = 1 1300
G = 10 700
Bandwidth, −3 dB kHz
G = 100 200
G = 1000 20
V
O
= ±10 V,
Slew rate 4 V/µs
G = 10
G = 1 7
G = 10 7
Settling time, 0.01% µs
G = 100 9
G = 1000 80
Overload recovery 50% overdrive 4 µs
POWER SUPPLY
Voltage range ±2.25 ±15 ±18 V
V
IN
= 0 V ±700 ±750
Current, total µA
Over temperature ±1200
TEMPERATURE RANGE
Specification −55 125 °C
Operating −55 125 °C
8-pin DIP 80
θ
JA
°C/W
SO-8 SOIC 150
(2) Specified by wafer test.
(3) Temperature coefficient of the 49.4-kΩ term in the gain equation.
(4) Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.
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