Datasheet

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SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005
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4
ELECTRICAL CHARACTERISTICS (continued)
At T
A
= +25°C, V
S
= ±15V, R
L
= 10kΩ, unless otherwise noted.
INA128PA, UA
INA129PA, UA
INA128P, U
INA129P. U
PARAMETER UNITMAXTYPMINMAXTYPMINCONDITIONS
OUTPUT
Voltage: Positive R
L
= 10kΩ (V+) − 1.4 (V+) − 0.9 ∗ ∗ V
Voltage: Negative R
L
= 10kΩ (V−) + 1.4 (V−) + 0.8 ∗ ∗ V
Load Capacitance Stability 1000 ∗ pF
Short-Circuit Current +6/−15 ∗ mA
FREQUENCY RESPONSE
Bandwidth, −3dB G = 1 1.3 ∗ MHz
G = 10 700 ∗ kHz
G = 100 200 ∗ kHz
G = 1000 20 ∗ kHz
Slew Rate V
O
= ±10V, G = 10 4 ∗ V/µs
Settling Time, 0.01% G = 1 7 ∗ µs
G = 10 7 ∗ µs
G = 100 9 ∗ µs
G = 1000 80 ∗ µs
Overload Recovery 50% Overdrive 4 ∗ µs
POWER SUPPLY
Voltage Range ±2.25 ±15 ±18 ∗ ∗ ∗ V
Current, Total V
IN
= 0V ±700 ±750 ∗ ∗ µA
TEMPERATURE RANGE
Specification −40 +85 ∗ ∗ °C
Operating −40 +125 ∗ ∗ °C
q
JA
8-Pin DIP 80 ∗ °C/W
SO-8 SOIC 150 ∗ °C/W
NOTE
:
∗ Specification is same as INA128P, U or INA129P, U.
(1)
Input common-mode range varies with output voltage — see typical curves.
(2)
Specified by wafer test.
(3)
Temperature coefficient of the 50kΩ (or 49.4kΩ) term in the gain equation.
(4)
Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.