Datasheet

"#$
"#%
SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005
www.ti.com
3
ELECTRICAL CHARACTERISTICS
At T
A
= +25°C, V
S
= ±15V, R
L
= 10k, unless otherwise noted.
INA128P, U
INA129P. U
INA128PA, UA
INA129PA, UA
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNIT
INPUT
Offset Voltage, RTI
Initial T
A
= +25°C ±10±100/G ±50±500/G ±25±100/G ±125±1000/G µV
vs Temperature T
A
= T
MIN
to T
MAX
±0.2±2/G ±0.5±20/G ±0.2±5/G ±1±20/G µV/°C
vs Power Supply V
S
= ±2.25V to ±18V ±0.2±20/G ±1±100/G ±2±200/G µV/V
Long-Term Stability ±0.1±3/G µV/mo
Impedance, Differential 10
10
|| 2 || pF
Common-Mode 10
11
|| 9 || pF
Common-Mode Voltage Range
(1)
V
O
= 0V (V+) − 2 (V+) − 1.4 V
(V−) + 2 (V−) + 1.7 V
Safe Input Voltage ±40 V
Common-Mode Rejection V
CM
= ±13V, R
S
= 1k
G = 1 80 86 73 dB
G = 10 100 106 93 dB
G = 100 120 125 110 dB
G = 1000 120 130 110 dB
BIAS CURRENT ±2 ±5 ±10 nA
vs Temperature ±30 pA/°C
Offset Current ±1 ±5 ±10 nA
vs Temperature ±30 pA/°C
NOISE VOLTAGE, RTI G = 1000, R
S
= 0
f = 10Hz 10 nV/Hz
f = 100Hz 8 nV/Hz
f = 1kHz 8 nV/Hz
f
B
= 0.1Hz to 10Hz 0.2 µV
PP
Noise Current
f = 10Hz 0.9 pA/Hz
f = 1kHz 0.3 pA/Hz
f
B
= 0.1Hz to 10Hz 30 pA
PP
GAIN
Gain Equation, INA128 1 + (50kΩ/R
G
) V/V
Gain Equation, INA129 1 + (49.4kΩ/R
G
) V/V
Range of Gain 1 10000 V/V
Gain Error G = 1 ±0.01 ±0.024 ±0.1 %
G = 10 ±0.02 ±0.4 ±0.5 %
G = 100 ±0.05 ±0.5 ±0.7 %
G = 1000 ±0.5 ±1 ±2 %
Gain vs Temperature
(2)
G = 1 ±1 ±10 ppm/°C
50k (or 49.4k) Resistance
(2)(3)
±25 ±100 ppm/°C
Nonlinearity V
O
= ±13.6V, G = 1 ±0.0001 ±0.001 ±0.002 % of FSR
G = 10 ±0.0003 ±0.002 ±0.004 % of FSR
G = 100 ±0.0005 ±0.002 ±0.004 % of FSR
G = 1000 ±0.001
(4)
% of FSR
NOTE
:
Specification is same as INA128P, U or INA129P, U.
(1)
Input common-mode range varies with output voltage — see typical curves.
(2)
Specified by wafer test.
(3)
Temperature coefficient of the 50k (or 49.4k) term in the gain equation.
(4)
Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is ±0.001%.