Datasheet

®
INA116
2
SPECIFICATIONS
AT T
A
= +25°C, V
S
= ±15V, R
L
= 10kΩ, unless otherwise noted.
INA116P, U INA116PA, UA
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
INPUT
Offset Voltage, RTI
Initial T
A
= +25°C ±0.5 ±0.5/G ±2 ±2/G ✻ ±5 ±5/G mV
vs Temperature T
A
= T
MIN
to T
MAX
See Typical Curve ✻
vs Power Supply V
S
= ±4.5V to ±18V ±10 ±15/G ±50 ±100/G ✻ ±100 ±200/G µV/V
Long-Term Stability ±1 ±5/G ✻ µV/mo
Bias Current ±3 ±25 ✻ ±100 fA
vs Temperature See Typical Curve ✻
Offset Current ±1 ±25 ✻ ±100 fA
vs Temperature See Typical Curve ✻
Impedance, Differential >10
15
/0.2 ✻ Ω/pF
Common-Mode >10
15
/7 ✻ Ω/pF
Common-Mode Voltage Range (V+)–4 (V+)–2 ✻✻ V
(V–)+4 (V–)+2.4 ✻✻ V
Safe Input Voltage ±40 ✻ V
Common-Mode Rejection V
CM
= ±11V, ∆R
S
= 1kΩ
G = 1 80 89 73 ✻ dB
G = 10 84 92 78 ✻ dB
G = 100 86 94 80 ✻ dB
V
CM
= ±5V, G = 1000 86 94 80 ✻ dB
NOISE
Voltage Noise, RTI G = 1000, R
S
= 0Ω
f = 1kHz 28 ✻ nV/√Hz
f
B
= 0.1Hz to 10Hz 2 ✻ µVp-p
Current Noise
f = 1kHz 0.1 ✻ fA/√Hz
GAIN
Gain Equation 1+(50kΩ/R
G
) ✻ V/V
Range of Gain 1 1000 ✻✻V/V
Gain Error G = 1 ±0.01 ±0.05 ✻ 0.1 %
G = 10 ±0.25 ±0.4 ✻ ±0.5 %
G = 100 ±0.35 ±0.5 ✻ ±0.7 %
G = 1000 ±1.25 ✻ %
Gain vs Temperature
(1)
G = 1 ±5 ±10 ✻ ±20 ppm/°C
50kΩ Resistance
(1)(2)
±25 ±100 ✻ ±100 ppm/°C
Nonlinearity G = 1 ±0.0005 ±0.005 ✻ ±0.01 % of FSR
G = 10 ±0.001 ±0.005 ✻ ±0.01 % of FSR
G = 100 ±0.001 ±0.005 ✻ ±0.01 % of FSR
G = 1000 ±0.005 ✻ % of FSR
GUARD OUTPUTS
Offset Voltage ±15 ±50 ✻✻mV
Output Impedance 650 ✻ Ω
Current Drive +2/–0.05 ✻ mA
OUTPUT
Voltage Positive R
L
= 10kΩ (V+) –1 (V+) –0.7 ✻✻ V
Negative R
L
= 10kΩ (V–) +0.35 (V–) +0.2 ✻✻ V
Load Capacitance Stability 1000 ✻ pF
Short-Circuit Current +5/–12 ✻ mA
FREQUENCY RESPONSE
Bandwidth, –3dB G = 1 800 ✻ kHz
G = 10 500 ✻ kHz
G = 100 70 ✻ kHz
G = 1000 7 ✻ kHz
Slew Rate G = 10 to 200 0.8 ✻ V/µs
Settling Time, 0.01% 10V Step, G = 1 22 ✻ µs
G = 10 25 ✻ µs
G = 100 145 ✻ µs
G = 1000 400 ✻ µs
Output Overload Recovery 50% Overdrive 20 ✻ µs
POWER SUPPLY
Voltage Range ±4.5 ±15 ±18 ✻✻✻V
Current V
IN
= 0V ±1 ±1.4 ✻✻mA
TEMPERATURE RANGE
Specification –40 85 ✻✻°C
Operating –40 125 ✻✻°C
θ
JA
80 ✻ °C/W
✻ Specification same as INA116P
NOTE: (1) Guaranteed by wafer test. (2) Temperature coefficient of the “50kΩ” term in the gain equation.