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Table 2. Waveform Parameters in Contact Discharge Mode

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Simulator Rise Time ±25% Current at 30ns ±30% Current at 60ns ±30%

Stress Level Ipeak ±15% [A]

Voltage [kV] [nS] [A] [A]

1 2 7.5 0.8 4 2

2 4 15 0.8 8 4

3 6 22.5 0.8 12 6

4 8 30 0.8 16 8

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Contact and air discharge are different test methods and test severity is not equivalent between contact and air discharge

methods.

TEST METHOD AND SET-UP

An example test setup is shown in figure 4. Details of the testing table and ground planes can be found in

IEC 61000-4-2 test procedure. Ground the ESD EVM using the banana connector J1. Discharge the ESD

simulator on the vias on one side of the EVM; clamping voltage can be measured using the vias on the

other side of the EVM with an oscilloscope. Contact and air-gap discharge are tested using the same

simulator with the same discharge waveform. While the simulator is in direct contact with the DUT during

contact, it is not during air-gap.

Figure 4. System Level ESD Test Setup

EVALUATION OF TEST RESULTS

Connect the devices on the EVM to a curve tracer both before and after ESD testing. After testing, if the

IV curve of the ESD protection diodes shifts ±1V or leakage current increases by a factor of ten, then it is

most likely that the device is permanently damaged by ESD.

ESD Protection Diodes EVM SLVU702–March 2012

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