Datasheet

DS92LV010A
SNLS007E –MAY 1998–REVISED APRIL 2013 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1)(2)(3)
Supply Voltage (V
CC
) 6.0V
Enable Input Voltage (DE, RE) −0.3V to (V
CC
+ 0.3V)
Driver Input Voltage (DIN) −0.3V to (V
CC
+ 0.3V)
Receiver Output Voltage (R
OUT
) −0.3V to (V
CC
+ 0.3V)
Bus Pin Voltage (DO/RI±) −0.3V to + 3.9V
Driver Short Circuit Current Continuous
ESD (HBM 1.5 kΩ, 100 pF) >2.0 kV
Maximum Package Power Dissipation at 25°C SOIC 1025 mW
Derate SOIC Package 8.2 mW/°C
Junction Temperature +150°C
Storage Temperature Range −65°C to +150°C
Lead Temperature (Soldering, 4 sec.) 260°C
(1) All currents into device pins are positive; all currents out of device pins are negative. All voltages are referenced to device ground except
V
OD
, V
ID
, V
TH
and V
TL
unless otherwise specified.
(2) Absolute Maximum Ratings are these beyond which the safety of the device cannot be ensured. They are not meant to imply that the
device should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
RECOMMENDED OPERATING CONDITIONS
Min Max Units
Supply Voltage (V
CC
), or 3.0 3.6 V
Supply Voltage (V
CC
) 4.5 5.5 V
Receiver Input Voltage 0.0 2.9 V
Operating Free Air Temperature −40 +85 °C
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