Datasheet

DS92001
SNLS147F JUNE 2002REVISED APRIL 2013
www.ti.com
Table 1. Functional Operation
BLVDS Inputs BLVDS Outputs
[IN+] [IN] OUT+ OUT
VID 0.1V H L
VID 0.1V L H
0.1V VID 0.1V Undefined Undefined
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)(2)
Supply Voltage (V
CC
) 0.3V to +4V
LVCMOS/LVTTL Input Voltage (EN) 0.3V to (V
CC
+ 0.3V)
B/LVDS Receiver Input Voltage (IN+, IN) 0.3V to +4V
BLVDS Driver Output Voltage (OUT+, OUT) 0.3V to +4V
BLVDS Output Short Circuit Current Continuous
Junction Temperature +150°C
Storage Temperature Range 65°C to +150°C
Lead Temperature Range Soldering (4 sec.) +260°C
Maximum Package Power Dissipation at D Package 726 mW
25°C
Derate D Package 5.8 mW/°C above +25°C
NGK Package 2.44 W
Derate NGK Package 19.49 mW/°C above +25°C
ESD Ratings (HBM, 1.5kΩ, 100pF) 2.5kV
(EIAJ, 0Ω, 200pF) 250V
(1) “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be ensured. They are not meant to imply
that the device should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
Recommended Operating Conditions
Min Typ Max Units
Supply Voltage (V
CC
) 3.0 3.3 3.6 V
Receiver Differential Input Voltage (V
ID
) with V
CM
=1.2V 0.1 2.4 |V|
Operating Free Air Temperature 40 +25 +85 °C
B/LVDS Input Rise/Fall 20% to 80% 2 20 ns
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