Datasheet
DS91M125
SNLS290C –AUGUST 2008–REVISED APRIL 2013
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1)(2)
Supply Voltage −0.3V to +4V
LVCMOS Input Voltages −0.3V to (V
DD
+ 0.3V)
M-LVDS Output Voltages −1.9V to +5.5V
LVDS Input Voltages −0.3V to (V
DD
+ 0.3V)
Maximum Package Power Dissipation at +25°C SOIC Package 2.21W
Derate SOIC Package 19.2 mW/°C above +25°C
Thermal Resistance (4-Layer, 2 oz. Cu, JEDEC) θ
JA
52°C/W
θ
JC
19°C/W
Maximum Junction Temperature 140°C
Storage Temperature Range −65°C to +150°C
Lead Temperature (Soldering, 4 seconds) 260°C
ESD Susceptibility HBM
(3)
≥ 8 kV
MM
(4)
≥ 250V
CDM
(5)
≥ 1250V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating
Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.
(3) Human Body Model, applicable std. JESD22-A114C
(4) Machine Model, applicable std. JESD22-A115-A
(5) Field Induced Charge Device Model, applicable std. JESD22-C101-C
RECOMMENDED OPERATING CONDITIONS
Min Typ Max Units
Supply Voltage, V
DD
3.0 3.3 3.6 V
Voltage at M-LVDS Outputs −1.4 +3.8 V
Voltage at LVDS Inputs 0 V
DD
V
LVCMOS Input Voltage High V
IH
2.0 V
DD
V
LVCMOS Input Voltage Low V
IL
0 0.8 V
Operating Free Air Temperature T
A
−40 +25 +85 °C
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