Datasheet

DS91M047
www.ti.com SNLS145E –JUNE 2008–REVISED APRIL 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1)(2)
Power Supply Voltage −0.3V to +4V
LVCMOS Input Voltage −0.3V to (V
DD
+ 0.3V)
M-LVDS Output Voltage −1.9V to +5.5V
M-LVDS Output Short Circuit Current Duration Continuous
Junction Temperature +140°C
Storage Temperature Range −65°C to +150°C
Lead Temperature Range Soldering (4 sec.) +260°C
Maximum Package Power Dissipation @ +25°C D Package 2.21W
Derate D Package 19.2 mW/°C above +25°C
Package Thermal Resistance (4-Layer, 2 oz. Cu, θ
JA
+52°C/W
JEDEC)
θ
JC
+19°C/W
ESD Susceptibility HBM ≥8 kV
MM ≥250V
CDM ≥1250V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur, including inoperability and degradation of
device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or
other conditions beyond those indicated in the is not implied. The Recommended Operating Conditions indicate conditions at which the
device is functional and the device should not be operated beyond such conditions.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
RECOMMENDED OPERATING CONDITIONS
Min Typ Max Units
Supply Voltage (VDD) +3.0 +3.3 +3.6 V
Voltage at Any Bus Terminal (Separate or Common-Mode) −1.4 +3.8 V
High Level Input Voltage (V
IH
) 2.0 V
DD
V
Low Level Input Voltage (V
IL
) 0 0.8 V
Operating Free Air Temperature (T
A
) −40 +25 +85 °C
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